http://www.ncepower.com
NCEP40P07S
NCE P-Channel Super Trench Power MOSFET
Description
The NCEP40P07S uses Super Trench technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an extremely
low combination of RDS(ON) and Qg. This device is ideal for
high-frequency switching and synchronous rectification.
Schematic diagram
General Features
● VDS =-40V,ID =-7A
RDS(ON)=20.5mΩ (typical) @ VGS=-10V
RDS(ON)=27.5mΩ (typical) @ VGS=-4.5V
● Excellent gate charge x RDS(on) product(FOM)
● Very low on-resistance RDS(on)
● 150°C operating temperature
● Pb-free lead plating
● 100% UIS tested
Marking and pin assignment
Application
● DC/DC Converter
● Ideal for high-frequency switching and synchronous
rectification
100% UIS TESTED!
100% ∆Vds TESTED!
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCEP40P07S
NCEP40P07S
SOP-8
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
-40
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
V
V
VDS
±20
VGS
-7
-5
A
ID
ID (100℃)
IDM
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
A
-28
A
Maximum Power Dissipation
Single pulse avalanche energy (Note 5)
2.5
W
mJ
℃
PD
EAS
115
Operating Junction and Storage Temperature Range
-55 To 150
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-(Note 2)
RθJC
1.0
℃/W
Wuxi NCE Power Co., Ltd
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