Datasheet > NCEP40ND80G

NCEP40ND80G

更新时间： 2024-03-03 10:10:54

品牌	Logo	应用领域
新洁能 - NCEPOWER		/
页数	文件大小	规格书
6页	302K
描述
????新洁能提供的P型20V~60V和N型18V~100V的Dual（双芯）MOSFET产品，通过将两颗P型或者N型的功率MOSFET产品以并联合封的方式集成到单个封装中，极大程度上优化了产品结

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http://www.ncepower.com

NCEP40ND80G

NCE N-Channel Super Trench Power MOSFET

Description

General Features

The NCEP40ND80G uses Super Trench technology that is

uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and

● V_DS=40V,I_D=80A

R_DS(ON)=4.3mΩ (typical) @ V_GS=10V

_DS(ON)=5.5mΩ (typical) @ V_GS=4.5V

switching power losses are minimized due to an extremely low ● Excellent gate charge x R_DS(on)product(FOM)

combination of R_DS(ON)and Q_g. This device is ideal for

high-frequency switching and synchronous rectification.

● Very low on-resistance R_DS(on)

● 150 °C operating temperature

● Pb-free lead plating

Application

● DC/DC Converter

● Ideal for high-frequency switching and synchronous

100% UIS TESTED!

100% ∆Vds TESTED!

rectification

PiTnoApsVsiegwnment

Schematic Diagram

DFN 5X6

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

P40ND80G

NCEP40ND80G

DFN5x6-8L

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^DS

±20

V^GS

56.6

320

I_D

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

I_D(100℃)

I_DM

Maximum Power Dissipation

P_D

Derating factor

Single pulse avalanche energy ^{(Note 5)}

0.56

500

W/℃

℃

E_AS

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case^{(Note 2)}

R_θJC

1.8

℃/W

Wuxi NCE Power Co., Ltd

Page1

V2.0

12 3 4 5 6

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