Datasheet > NCEP4075AGU

NCEP4075AGU

更新时间： 2024-04-09 18:59:52

品牌	Logo	应用领域
新洁能 - NCEPOWER		/
页数	文件大小	规格书
6页	685K
描述
新洁能提供击穿电压等级范围为30V至250V的N沟道SGT-I系列功率MOSFET产品，以技术水平和卓越的质量管理保证了出色的产品性能和可靠性，在降低系统设计难度的同时，提供了性价比。广泛应用于开

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NCEP4075AGU 数据手册

http://www.ncepower.com

NCEP4075AGU

NCE N-Channel Super Trench Power MOSFET

Description

The NCEP4075AGU uses Super Trench technology that is

General Features

uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and

switching power losses are minimized due to an extremely low

combination of R_DS(ON)and Q_g. This device is ideal for

high-frequency switching and synchronous rectification.

● V_DS=40V,I_D=75A

R_DS(ON)=5.1mΩ (typical) @ V_GS=10V

● Excellent gate charge x R_DS(on)product(FOM)

● Very low on-resistance R_DS(on)

● 150 °C operating temperature

● Pb-free lead plating

Application

● DC/DC Converter

●

Ideal for high-frequency switching and synchronous

rectification

100% UIS TESTED!

100% ΔVds TESTED!

DFN 5X6-8L

Schematic Diagram

Top View

Bottom View

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

P4075AGU

NCEP4075AGU

DFN5x6-8L

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

VDS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

VGS

(T_C=25℃)

Drain Current-Continuous

I_D

(T_C=100℃)

(T_C=25℃)

Maximum Power Dissipation

Pulsed Drain Current

Derating factor

P_D

I_DM

300

0.44

163

W/℃

℃

Single pulse avalanche energy ^{(Note 1)}

E_AS

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case

R_θJC

2.3

℃/W

Wuxi NCE Power Co., Ltd

Page1

V1.0

12 3 4 5 6

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