Datasheet > NCEP11N10AQU

NCEP11N10AQU

更新时间： 2024-03-03 10:10:13

品牌	Logo	应用领域
新洁能 - NCEPOWER		栅栅极
页数	文件大小	规格书
7页	321K
描述
新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超低的导通电阻（RDS(on)）与超低栅极电荷（Qg）的特点，结合先进轻巧紧凑的封装进一步提高了系统的功率密

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NCEP11N10AQU 数据手册

http://www.ncepower.com

NCEP11N10AQU

NCE N-Channel Super Trench II Power MOSFET

Description

General Features

The NCEP11N10AQU uses Super Trench II technology that is ● V_DS=100V,I_D=55A

uniquely optimized to provide the most efficient high frequency

switching performance. Both conduction and switching power

losses are minimized due to an extremely low combination of

_DS(ON)=10.5mΩ (typical) @ V_GS=10V

_DS(ON)=13.5mΩ (typical) @ V_GS=4.5V

● Excellent gate charge x R_DS(on)product(FOM)

R_DS(ON)and Q_g. This device is ideal for high-frequency switching ● Very low on-resistance R_DS(on)

and synchronous rectification.

● 150 °C operating temperature

● Pb-free lead plating

Application

● DC/DC Converter

● Ideal for high-frequency switching and synchronous rectification

100% UIS TESTED!

100% ∆Vds TESTED!

DFN 3.3X3.3

Schematic Diagram

Top View

Bottom View

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

NCEP11N10AQU

DFN3.3X3.3-8L

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

100

±20

V^DS

V^GS

I_D

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

I_D(100℃)

I_DM

220

Maximum Power Dissipation

P_D

Derating factor

Single pulse avalanche energy ^{(Note 5)}

0.56

156

W/℃

℃

E_AS

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case^{(Note 2)}

R_θJC

1.79

℃/W

Wuxi NCE Power Co., Ltd

Page1

V1.0

12 3 4 5 6 7

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