http://www.ncepower.com
NCEP10N85AG
NCE N-Channel Super Trench II Power MOSFET
Description
General Features
The NCEP10N85AG uses Super Trench II technology that is
uniquely optimized to provide the most efficient high frequency
switching performance. Both conduction and switching power
losses are minimized due to an extremely low combination of
● VDS =85V,ID =58A
R
R
DS(ON)=8.5mΩ (typical) @ VGS=10V
DS(ON)=11.5mΩ (typical) @ VGS=4.5V
● Excellent gate charge x RDS(on) product(FOM)
RDS(ON) and Qg. This device is ideal for high-frequency switching ● Very low on-resistance RDS(on)
and synchronous rectification.
● 150 °C operating temperature
● Pb-free lead plating
Application
● DC/DC Converter
● Ideal for high-frequency switching and synchronous rectification
100% UIS TESTED!
100% ∆Vds TESTED!
DFN 5X6
Schematic Diagram
Top View
Bottom View
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
P090N85AGU
NCEP090N85AGU
DFN5X6-8L
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
85
±20
V
V
VDS
VGS
58
A
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
ID (100℃)
IDM
42
A
232
A
Maximum Power Dissipation
71
W
PD
Derating factor
Single pulse avalanche energy (Note 5)
0.57
160
W/℃
mJ
℃
EAS
Operating Junction and Storage Temperature Range
-55 To 150
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
1.76
℃/W
Wuxi NCE Power Co., Ltd
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