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NCEP090N85AQU
NCE N-Channel Super Trench II Power MOSFET
Description
General Features
The NCEP090N85AQU uses Super Trench II technology that
is uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an extremely low
combination of RDS(ON) and Qg. This device is ideal for
high-frequency switching and synchronous rectification.
● VDS =85V,ID =56A
R
R
DS(ON)=8.5mΩ (typical) @ VGS=10V
DS(ON)=11.5mΩ (typical) @ VGS=4.5V
● Excellent gate charge x RDS(on) product(FOM)
● Very low on-resistance RDS(on)
● 150 °C operating temperature
● Pb-free lead plating
Application
● DC/DC Converter
● Ideal for high-frequency switching and synchronous rectification
100% UIS TESTED!
100% ∆Vds TESTED!
DFN 3.3X3.3
Schematic Diagram
Top View
Bottom View
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCEP090N85AQU NCEP090N85AQU
DFN3.3X3.3-8L
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
85
±20
V
V
VDS
VGS
56
A
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
ID (100℃)
IDM
40
A
224
A
Maximum Power Dissipation
60
W
PD
Derating factor
Single pulse avalanche energy (Note 5)
0.48
156
W/℃
mJ
℃
EAS
Operating Junction and Storage Temperature Range
-55 To 150
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
2.08
℃/W
Wuxi NCE Power Co., Ltd
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