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NCEP090N85AQU PDF预览

NCEP090N85AQU

更新时间: 2024-03-03 10:10:55
品牌 Logo 应用领域
新洁能 - NCEPOWER 栅极
页数 文件大小 规格书
7页 320K
描述
新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超低的导通电阻(RDS(on))与超低栅极电荷(Qg)的特点,结合先进轻巧紧凑的封装进一步提高了系统的功率密

NCEP090N85AQU 数据手册

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http://www.ncepower.com  
NCEP090N85AQU  
NCE N-Channel Super Trench II Power MOSFET  
Description  
General Features  
The NCEP090N85AQU uses Super Trench II technology that  
is uniquely optimized to provide the most efficient high  
frequency switching performance. Both conduction and  
switching power losses are minimized due to an extremely low  
combination of RDS(ON) and Qg. This device is ideal for  
high-frequency switching and synchronous rectification.  
VDS =85V,ID =56A  
R
R
DS(ON)=8.5m(typical) @ VGS=10V  
DS(ON)=11.5m(typical) @ VGS=4.5V  
Excellent gate charge x RDS(on) product(FOM)  
Very low on-resistance RDS(on)  
150 °C operating temperature  
Pb-free lead plating  
Application  
DC/DC Converter  
Ideal for high-frequency switching and synchronous rectification  
100% UIS TESTED!  
100% Vds TESTED!  
DFN 3.3X3.3  
Schematic Diagram  
Top View  
Bottom View  
Package Marking and Ordering Information  
Device Marking  
Device  
Device Package  
Reel Size  
Tape width  
Quantity  
NCEP090N85AQU NCEP090N85AQU  
DFN3.3X3.3-8L  
-
-
-
Absolute Maximum Ratings (TC=25unless otherwise noted)  
Parameter  
Symbol  
Limit  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current-Continuous  
85  
±20  
V
V
VDS  
VGS  
56  
A
ID  
Drain Current-Continuous(TC=100)  
Pulsed Drain Current  
ID (100)  
IDM  
40  
A
224  
A
Maximum Power Dissipation  
60  
W
PD  
Derating factor  
Single pulse avalanche energy (Note 5)  
0.48  
156  
W/℃  
mJ  
EAS  
Operating Junction and Storage Temperature Range  
-55 To 150  
TJ,TSTG  
Thermal Characteristic  
Thermal Resistance,Junction-to-Case(Note 2)  
RθJC  
2.08  
/W  
Wuxi NCE Power Co., Ltd  
Page1  
V1.0  

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