5秒后页面跳转
NCEP090N20T PDF预览

NCEP090N20T

更新时间: 2024-11-21 17:01:07
品牌 Logo 应用领域
新洁能 - NCEPOWER 栅极
页数 文件大小 规格书
7页 782K
描述
新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超低的导通电阻(RDS(on))与超低栅极电荷(Qg)的特点,结合先进轻巧紧凑的封装进一步提高了系统的功率密

NCEP090N20T 数据手册

 浏览型号NCEP090N20T的Datasheet PDF文件第2页浏览型号NCEP090N20T的Datasheet PDF文件第3页浏览型号NCEP090N20T的Datasheet PDF文件第4页浏览型号NCEP090N20T的Datasheet PDF文件第5页浏览型号NCEP090N20T的Datasheet PDF文件第6页浏览型号NCEP090N20T的Datasheet PDF文件第7页 
NCEP090N20T  
NCE N-Channel Super Trench II Power MOSFET  
Description  
The series of devices uses Super Trench II technology that is  
General Features  
uniquely optimized to provide the most efficient high frequency  
switching performance. Both conduction and switching power  
losses are minimized due to an extremely low combination of  
RDS(ON) and Qg. This device is ideal for high-frequency switching  
and synchronous rectification.  
VDS =200V,ID =125A  
RDS(ON)=7.5mΩ , typical @ VGS=10V  
Excellent gate charge x RDS(on) product(FOM)  
Very low on-resistance RDS(on)  
175 °C operating temperature  
Pb-free lead plating  
Application  
100% UIS TESTED!  
DC/DC Converter  
100% ΔVds TESTED!  
Ideal for high-frequency switching and synchronous  
rectification  
TO-247-3L  
Schematic Diagram  
Package Marking and Ordering Information  
Device Marking  
Device  
Device Package  
Reel Size  
Tape width  
Quantity  
NCEP090N20T  
NCEP090N20T  
TO-247-3L  
-
-
-
Absolute Maximum Ratings (TC=25unless otherwise noted)  
Parameter  
Symbol  
VDS  
Limit  
200  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current-Continuous  
V
V
±20  
VGS  
125  
88  
A
ID  
Drain Current-Continuous(TC=100)  
Pulsed Drain Current  
ID (100)  
IDM  
A
500  
340  
2.27  
1692  
A
Maximum Power Dissipation  
W
PD  
Derating factor  
W/℃  
mJ  
Single pulse avalanche energy (Note 1)  
Operating Junction and Storage Temperature Range  
EAS  
-55 To 175  
TJ,TSTG  
Thermal Characteristic  
Thermal Resistance,Junction-to-Case  
RθJC  
0.44  
/W  
http://www.ncepower.com  
Wuxi NCE Power Co., Ltd  
Page1  
V1.0  

与NCEP090N20T相关器件

型号 品牌 获取价格 描述 数据表
NCEP090N85A NCEPOWER

获取价格

新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超
NCEP090N85AGU NCEPOWER

获取价格

新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超
NCEP090N85AQU NCEPOWER

获取价格

新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超
NCEP090N85GU NCEPOWER

获取价格

新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超
NCEP090N85QU NCEPOWER

获取价格

新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超
NCEP092N10AS NCEPOWER

获取价格

新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超
NCEP095N10 NCEPOWER

获取价格

新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超
NCEP095N10A NCEPOWER

获取价格

新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超
NCEP095N10AG NCEPOWER

获取价格

新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超
NCEP10N12 NCEPOWER

获取价格

新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超