Datasheet > NCEP090N20

NCEP090N20

更新时间： 2024-03-03 10:10:36

品牌	Logo	应用领域
新洁能 - NCEPOWER		栅栅极
页数	文件大小	规格书
8页	1292K
描述
新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超低的导通电阻（RDS(on)）与超低栅极电荷（Qg）的特点，结合先进轻巧紧凑的封装进一步提高了系统的功率密

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NCEP090N20 数据手册

NCEP090N20,NCEP090N20D

NCE N-Channel Super Trench II Power MOSFET

Description

General Features

The series of devices uses Super Trench II technology that is

uniquely optimized to provide the most efficient high frequency

switching performance. Both conduction and switching power

losses are minimized due to an extremely low combination of

R_DS(ON)and Q_g. This device is ideal for high-frequency switching

and synchronous rectification.

● V_DS=200V,I_D=125A

R_DS(ON)=7.7mΩ , typical (TO-220)@ V_GS=10V

R_DS(ON)=7.5mΩ , typical (TO-263)@ V_GS=10V

● Excellent gate charge x R_DS(on)product(FOM)

● Very low on-resistance R_DS(on)

● 175 °C operating temperature

● Pb-free lead plating

Application

● DC/DC Converter

100% UIS TESTED!

●Ideal for high-frequency switching and synchronous

rectification

100% ΔVds TESTED!

TO-220

TO-263

Schematic Diagram

Package Marking and Ordering Information

Device Marking

NCEP090N20

NCEP090N20D

Device

Device Package

Reel Size

Tape width

Quantity

NCEP090N20

NCEP090N20D

TO-220-3L

TO-263-2L

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

VDS

Limit

200

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

±20

VGS

125

I_D

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

I_D(100℃)

I_DM

500

340

2.27

1692

Maximum Power Dissipation

P_D

Derating factor

W/℃

℃

Single pulse avalanche energy ^{(Note 1)}

Operating Junction and Storage Temperature Range

E_AS

-55 To 175

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case

R_θJC

0.44

℃/W

http://www.ncepower.com

Wuxi NCE Power Co., Ltd

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