NCEP090N10GU
NCE N-Channel Super Trench II Power MOSFET
Description
The series of devices uses Super Trench II technology that is
General Features
uniquely optimized to provide the most efficient high frequency
switching performance. Both conduction and switching power
losses are minimized due to an extremely low combination of
● VDS =100V,ID =65A
DS(ON)=7.0mΩ , typical@ VGS=10V
R
● Excellent gate charge x RDS(on) product(FOM)
● Very low on-resistance RDS(on)
● 150 °C operating temperature
● Pb-free lead plating
RDS(ON) and Qg. This device is ideal for high-frequency switching
and synchronous rectification.
Application
100% UIS TESTED!
● DC/DC Converter
100% ∆Vds TESTED!
●Ideal for high-frequency switching and synchronous
rectification
DFN 5X6
Schematic Diagram
Top View
Bottom View
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
P090N10GU
NCEP090N10GU
DFN5X6-8L
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
100
±20
V
V
VDS
VGS
Drain Current-Continuous(Note 1)
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
65
A
ID
ID (100℃)
IDM
47
A
260
A
Maximum Power Dissipation
85
W
PD
Derating factor
Single pulse avalanche energy (Note 4)
0.68
288
W/℃
mJ
℃
EAS
Operating Junction and Storage Temperature Range
-55 To 150
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Case
RθJC
1.47
℃/W
Wuxi NCE Power Co., Ltd
Page1
V2.0
http://www.ncepower.com