Datasheet > NCEP088NH150GU

NCEP088NH150GU

更新时间： 2024-04-09 19:00:01

品牌	Logo	应用领域
新洁能 - NCEPOWER		栅
页数	文件大小	规格书
7页	737K
描述
新洁能正在陆续推出第三代屏蔽栅沟槽型功率MOSFET，相比于上一代产品，第三代产品特征导通电阻降低20%以上，ESD能力、大电流关断能力、短路能力提升10%以上，同时具有更优的EMI特性，可以满足

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NCEP088NH150GU 数据手册

NCEP088NH150GU

http://www.ncepower.com

NCE N-Channel Super Trench III Power MOSFET

Description

General Features

● V_DS=150V,I_D=96.5A

The NCEP088NH150GU uses Super Trench III technology

that is uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and

switching power losses are minimized due to an extremely low

combination of R_DS(ON)and Q_g. This device is ideal for

high-frequency switching and synchronous rectification.

Application

R_DS(ON)=7.8mΩ (typical) @ V_GS=10V

● Excellent gate charge x R_DS(on)product(FOM)

● Very low on-resistance R_DS(on)

● 150 °C operating temperature

● 100% UIS tested

● 100% ΔVds tested

● DC/DC Converter

● Pb-free lead plating

●Ideal for high-frequency switching and synchronous

rectification

PDFN 5X6-8L

Schematic Diagram

Top View

Bottom View

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

P088NH150GU

NCEP088NH150GU

DFN5X6-8L

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

VDS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

150

±20

VGS

96.5

I_D

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

I_D(100℃)

I_DM

60.5

386

Maximum Power Dissipation

180

P_D

Derating factor

1.44

W/℃

℃

Single pulse avalanche energy ^{(Note 1)}

E_AS

501

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case

R_θJC

0.7

℃/W

Wuxi NCE Power Co., Ltd

Page 1

v1.0

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