NCEP075N85AGU
NCE N-Channel Super Trench II Power MOSFET
Description
General Features
The series of devices uses Super Trench II technology that is
uniquely optimized to provide the most efficient high frequency
switching performance. Both conduction and switching power
losses are minimized due to an extremely low combination of
● VDS =85V,ID =75A
RDS(ON)=5.6mΩ , typical @ VGS=10V
RDS(ON)=7.6mΩ , typical @ VGS=4.5V
R
DS(ON) and Qg. This device is ideal for high-frequency switching
● Excellent gate charge x RDS(on) product(FOM)
● Very low on-resistance RDS(on)
● 150 °C operating temperature
● Pb-free lead plating
and synchronous rectification.
Application
● DC/DC Converter
100% UIS TESTED!
●Ideal for high-frequency switching and synchronous
rectification
100% ∆Vds TESTED!
DFN 5X6
Schematic Diagram
Top View
Bottom View
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
P075N85AGU
NCEP075N85AGU
DFN5X6-8L
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
85
±20
V
V
VDS
VGS
75
A
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
ID (100℃)
IDM
55
A
300
A
Maximum Power Dissipation
95
W
PD
Derating factor
Single pulse avalanche energy (Note 4)
0.76
352
W/℃
mJ
℃
EAS
Operating Junction and Storage Temperature Range
-55 To 150
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Case
RθJC
1.32
℃/W
Wuxi NCE Power Co., Ltd
Page1
V2.0
http://www.ncepower.com