NCEP063N85G
NCE N-Channel Super Trench II Power MOSFET
Description
The series of devices uses Super Trench II technology that is
General Features
uniquely optimized to provide the most efficient high frequency
switching performance. Both conduction and switching power
losses are minimized due to an extremely low combination of
● VDS =85V,ID =90A
DS(ON)=5.5mΩ , typical@ VGS=10V
R
● Excellent gate charge x RDS(on) product(FOM)
● Very low on-resistance RDS(on)
● 150 °C operating temperature
● Pb-free lead plating
RDS(ON) and Qg. This device is ideal for high-frequency switching
and synchronous rectification.
Application
● DC/DC Converter
100% UIS TESTED!
●Ideal for high-frequency switching and synchronous
rectification
100% ∆Vds TESTED!
DFN5X6-8L
Schematic Diagram
Top View
Bottom View
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
P063N85G
NCEP063N85G
DFN5X6-8L
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
85
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
V
V
VDS
±20
VGS
90
66
A
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
ID (100℃)
IDM
A
360
100
0.80
423
A
Maximum Power Dissipation
W
PD
Derating factor
Single pulse avalanche energy (Note 5)
W/℃
mJ
℃
EAS
Operating Junction and Storage Temperature Range
-55 To 150
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
1.25
℃/W
Wuxi NCE Power Co., Ltd
Page1
V1.0
http://www.ncepower.com