NCEP060N10F
NCE N-Channel Super Trench II Power MOSFET
Description
The series of devices uses Super Trench II technology that is
General Features
uniquely optimized to provide the most efficient high frequency
switching performance. Both conduction and switching power
losses are minimized due to an extremely low combination of
● VDS =100V,ID =52A
DS(ON)=6.7mΩ , typical @ VGS=10V
R
● Excellent gate charge x RDS(on) product(FOM)
● Very low on-resistance RDS(on)
● 175 °C operating temperature
● Pb-free lead plating
R
DS(ON) and Qg. This device is ideal for high-frequency switching
and synchronous rectification.
Application
● DC/DC Converter
●Ideal for high-frequency switching and synchronous
100% UIS TESTED!
100% ∆Vds TESTED!
rectification
TO-220F
Schematic Diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCEP060N10F
NCEP060N10F
TO-220F
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
100
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
V
V
VDS
±20
VGS
52
37
A
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
ID (100℃)
IDM
A
208
40
A
Maximum Power Dissipation
W
PD
Derating factor
Single pulse avalanche energy (Note 5)
0.27
540
W/℃
mJ
℃
EAS
Operating Junction and Storage Temperature Range
-55 To 175
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
3.75
℃/W
Wuxi NCE Power Co., Ltd
Page1
V1.0
http://www.ncepower.com