http://www.ncepower.com
NCEP055N30GU
NCE N-Channel Super Trench II Power MOSFET
Description
General Features
The series of devices uses Super Trench II technology that is
uniquely optimized to provide the most efficient high frequency
switching performance. Both conduction and switching power
losses are minimized due to an extremely low combination of
● VDS =30V,ID =55A
RDS(ON)=4.2mΩ (typical) @ VGS=10V
DS(ON)=7.4mΩ (typical) @ VGS=4.5V
R
R
DS(ON) and Qg. This device is ideal for high-frequency switching
● Excellent gate charge x RDS(on) product(FOM)
● Very low on-resistance RDS(on)
● 150 °C operating temperature
● Pb-free lead plating
and synchronous rectification.
Application
● DC/DC Converter
● Ideal for high-frequency switching and synchronous
100% UIS TESTED!
rectification
100% ∆Vds TESTED!
DFN 5X6
Top View
Bottom View
Schematic Diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
P055N30GU
NCEP055N30GU
DFN5X6-8L
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
30
±20
V
V
VDS
VGS
55
A
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
ID (100℃)
IDM
42
A
220
A
Maximum Power Dissipation
30
W
PD
Derating factor
Single pulse avalanche energy (Note 5)
0.24
115
W/℃
mJ
℃
EAS
Operating Junction and Storage Temperature Range
-55 To 150
TJ,TSTG
Wuxi NCE Power Co., Ltd
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V4.0