NCEP055N12G
NCE N-Channel Super Trench II Power MOSFET
Description
The series of devices uses Super Trench II technology that is
General Features
uniquely optimized to provide the most efficient high frequency
switching performance. Both conduction and switching power
losses are minimized due to an extremely low combination of
● VDS =120V,ID =110A
DS(ON)=5.2mΩ , typical @ VGS=10V
● Excellent gate charge x RDS(on) product(FOM)
R
RDS(ON) and Qg. This device is ideal for high-frequency switching ● Very low on-resistance RDS(on)
and synchronous rectification.
● 150°C operating temperature
● Pb-free lead plating
Application
● DC/DC Converter
● Ideal for high-frequency switching and synchronous rectification
100% UIS TESTED!
100% ∆Vds TESTED!
DFN 5X6
Top View
Bottom View
Schematic Diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
P055N12G
NCEP055N12G
DFN5X6-8L
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
120
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
VDS
±20
V
VGS
110
78
A
A
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
ID (100℃)
IDM
440
145
1.16
540
A
Maximum Power Dissipation
W
PD
Derating factor
Single pulse avalanche energy (Note 1)
W/℃
mJ
℃
EAS
Operating Junction and Storage Temperature Range
-55 To 150
TJ,TSTG
Wuxi NCE Power Co., Ltd
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V1.0
http://www.ncepower.com