NCEP055N12,NCEP055N12D
NCE N-Channel Super Trench II Power MOSFET
Description
General Features
● VDS =120V,ID =120A
The series of devices uses Super Trench II technology that is
uniquely optimized to provide the most efficient high frequency
switching performance. Both conduction and switching power
losses are minimized due to an extremely low combination of
R
R
DS(ON)=5.2mΩ , typical (TO-220)@ VGS=10V
DS(ON)=5.0mΩ , typical (TO-263)@ VGS=10V
● Excellent gate charge x RDS(on) product(FOM)
● Very low on-resistance RDS(on)
● 175°C operating temperature
● Pb-free lead plating
R
DS(ON) and Qg. This device is ideal for high-frequency switching
and synchronous rectification.
Application
● DC/DC Converter
● Ideal for high-frequency switching and synchronous rectification
100% UIS TESTED!
100% ∆Vds TESTED!
TO-263
TO-220
Schematic Diagram
Package Marking and Ordering Information
Device Marking
NCEP055N12
NCEP055N12D
Device
Device Package
TO-220-3L
TO-263
Reel Size
Tape width
Quantity
NCEP055N12
NCEP055N12D
-
-
-
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
120
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
V
V
VDS
±20
VGS
120
85
A
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
ID (100℃)
IDM
A
480
200
1.33
871
A
Maximum Power Dissipation
W
PD
Derating factor
Single pulse avalanche energy (Note 5)
W/℃
mJ
℃
EAS
Operating Junction and Storage Temperature Range
-55 To 175
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
0.75
℃/W
Wuxi NCE Power Co., Ltd
Page1
V2.0
http://www.ncepower.com