NCEP045N10AG
NCE N-Channel Super Trench II Power MOSFET
Description
General Features
● VDS =100V,ID =125A
The series of devices uses Super Trench II technology that is
uniquely optimized to provide the most efficient high frequency
switching performance. Both conduction and switching power
losses are minimized due to an extremely low combination of
R
R
DS(ON)=4.0mΩ , typical @ VGS=10V
DS(ON)=5.0mΩ , typical @ VGS=4.5V
● Excellent gate charge x RDS(on) product(FOM)
● Very low on-resistance RDS(on)
● 150°C operating temperature
● Pb-free lead plating
R
DS(ON) and Qg. This device is ideal for high-frequency switching
and synchronous rectification.
Application
● DC/DC Converter
● Ideal for high-frequency switching and synchronous rectification
100% UIS TESTED!
100% ∆Vds TESTED!
DFN 5X6
Top View
Bottom View
Schematic Diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
P045N10AG
NCEP045N10AG
DFN5X6-8L
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
100
±20
V
V
VDS
VGS
125
A
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
ID (100℃)
IDM
95
A
500
A
Maximum Power Dissipation
150
W
PD
Derating factor
Single pulse avalanche energy (Note 5)
1.2
W/℃
mJ
℃
EAS
540
Operating Junction and Storage Temperature Range
-55 To 150
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
0.83
℃/W
Wuxi NCE Power Co., Ltd
Page1
V1.0
http://www.ncepower.com