http://www.ncepower.com
NCEP040N85GU
NCE N-Channel Super Trench II Power MOSFET
Description
General Features
The NCEP040N85GU uses Super Trench II technology that is ● VDS =85V,ID =125A
uniquely optimized to provide the most efficient high frequency
switching performance. Both conduction and switching power
losses are minimized due to an extremely low combination of
RDS(ON)=3.2mΩ (typical) @ VGS=10V
● Excellent gate charge x RDS(on) product(FOM)
RDS(ON) and Qg. This device is ideal for high-frequency switching ● Very low on-resistance RDS(on)
and synchronous rectification.
● 150 °C operating temperature
● Pb-free lead plating
Application
● DC/DC Converter
● Ideal for high-frequency switching and synchronous rectification
100% UIS TESTED!
100% ΔVds TESTED!
PDFN 5X6-8L
Top View
Bottom View
Schematic Diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
P040N85GU
NCEP040N85GU
PDFN5X6-8L
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
VDS
Limit
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
85
±20
V
VGS
125
A
A
ID
ID (100℃)
IDM
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
93
500
A
Maximum Power Dissipation
150
W
PD
Derating factor
1.2
W/℃
mJ
℃
Single pulse avalanche energy (Note 1)
Operating Junction and Storage Temperature Range
EAS
829
-55 To 150
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Case
RθJC
0.83
℃/W
Wuxi NCE Power Co., Ltd
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