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NCE N-Channel Super Trench II Power MOSFET
Description
NCEP040N85G
General Features
The NCEP040N85G uses Super Trench II technology that is
uniquely optimized to provide the most efficient high frequency
switching performance. Both conduction and switching power
losses are minimized due to an extremely low combination of
RDS(ON) and Qg. This device is ideal for high-frequency switching
and synchronous rectification.
● VDS =85V,ID =120A
RDS(ON)=3.5mΩ (typical) @ VGS=10V
● Excellent gate charge x RDS(on) product(FOM)
● Very low on-resistance RDS(on)
● 150 °C operating temperature
● Pb-free lead plating
Application
● DC/DC Converter
100% UIS TESTED!
100% ΔVds TESTED!
● Ideal for high-frequency switching and synchronous rectification
DFN 5X6
Top View
Bottom View
Schematic Diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
P040N85G
NCEP040N85G
DFN5X6-8L
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
VDS
Limit
85
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
V
V
±20
VGS
120
90
A
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
ID (100℃)
IDM
A
480
150
1.2
A
Maximum Power Dissipation
W
PD
Derating factor
W/℃
mJ
℃
Single pulse avalanche energy (Note 1)
Operating Junction and Storage Temperature Range
EAS
870
-55 To 150
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Case
RθJC
0.83
℃/W
Wuxi NCE Power Co., Ltd
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