Datasheet > NCEP040N10

NCEP040N10

更新时间： 2024-03-03 10:11:33

品牌	Logo	应用领域
新洁能 - NCEPOWER		栅栅极
页数	文件大小	规格书
7页	363K
描述
新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超低的导通电阻（RDS(on)）与超低栅极电荷（Qg）的特点，结合先进轻巧紧凑的封装进一步提高了系统的功率密

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NCEP040N10 数据手册

NCEP040N10,NCEP040N10D

NCE N-Channel Super Trench II Power MOSFET

Description

General Features

The series of devices uses Super Trench II technology that is

uniquely optimized to provide the most efficient high frequency

switching performance. Both conduction and switching power

losses are minimized due to an extremely low combination of

● V_DS=100V,I_D=130A

_DS(ON)=3.7mΩ , typical (TO-220)@ V_GS=10V

_DS(ON)=3.55mΩ , typical (TO-263)@ V_GS=10V

● Excellent gate charge x R_DS(on)product(FOM)

R_DS(ON)and Q_g. This device is ideal for high-frequency switching ● Very low on-resistance R_DS(on)

and synchronous rectification.

● 175 °C operating temperature

● Pb-free lead plating

Application

● DC/DC Converter

● Ideal for high-frequency switching and synchronous rectification

100% UIS TESTED!

100% ∆Vds TESTED!

TO-220

TO-263

Schematic Diagram

Bottom View

Top View

Package Marking and Ordering Information

Device Marking

NCEP040N10

NCEP040N10D

Device

Device Package

Reel Size

Tape width

Quantity

NCEP040N10

NCEP040N10D

TO-220-3L

TO-263-2L

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

100

±20

V^DS

V^GS

130

I_D

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current^{(Note 1)}

I_D(100℃)

I_DM

100

520

Maximum Power Dissipation

210

P_D

Derating factor

Single pulse avalanche energy ^{(Note 5)}

1.4

W/℃

℃

E_AS

750

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

Wuxi NCE Power Co., Ltd

Page1

V1.0

http://www.ncepower.com

12 3 4 5 6 7

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