Datasheet > NCEP039N10MD

NCEP039N10MD

更新时间： 2024-03-03 10:08:00

品牌	Logo	应用领域
新洁能 - NCEPOWER		栅栅极
页数	文件大小	规格书
9页	1515K
描述
新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超低的导通电阻（RDS(on)）与超低栅极电荷（Qg）的特点，结合先进轻巧紧凑的封装进一步提高了系统的功率密

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NCEP039N10MD 数据手册

Pb Free Product

NCEP039N10M, NCEP039N10MD

NCE N-Channel Super Trench II Power MOSFET

Description

General Features

The series of devices uses Super Trench II technology that is

uniquely optimized to provide the most efficient high frequency

switching performance. Both conduction and switching power

losses are minimized due to an extremely low combination of

R_DS(ON)and Q_g. This device is ideal for high-frequency switching

and synchronous rectification.

● V_DS=100V,I_D=135A

R_DS(ON)=3.65mΩ , typical (TO-220)@ V_GS=10V

R_DS(ON)=3.5mΩ , typical (TO-263)@ V_GS=10V

● Excellent gate charge x R_DS(on)product(FOM)

● Very low on-resistance R_DS(on)

● 175 °C operating temperature

● Pb-free lead plating

Application

● DC/DC Converter

● Pb-free Mold Compound

●Ideal for high-frequency switching and synchronous

rectification

100% UIS TESTED!

100% ΔVds TESTED!

TO-220

TO-263

Schematic Diagram

Package Marking and Ordering Information

Device Marking

NCEP039N10M

NCEP039N10MD

Device

Device Package

Reel Size

Tape width

Quantity

NCEP039N10M

NCEP039N10MD

TO-220

TO-263

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

VDS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

100

±20

VGS

135

I_D

I_D(100℃)

I_DM

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

108

540

Maximum Power Dissipation

220

P_D

Derating factor

1.47

W/℃

℃

Single pulse avalanche energy ^{(Note 1)}

Operating Junction and Storage Temperature Range

E_AS

730

-55 To 175

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case

R_θJC

0.68

℃/W

Wuxi NCE Power Co., Ltd

Page1

V3.0

http://www.ncepower.com

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