5秒后页面跳转
NCEP026N10M PDF预览

NCEP026N10M

更新时间: 2024-11-19 15:19:35
品牌 Logo 应用领域
新洁能 - NCEPOWER 栅极
页数 文件大小 规格书
7页 352K
描述
新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超低的导通电阻(RDS(on))与超低栅极电荷(Qg)的特点,结合先进轻巧紧凑的封装进一步提高了系统的功率密

NCEP026N10M 数据手册

 浏览型号NCEP026N10M的Datasheet PDF文件第2页浏览型号NCEP026N10M的Datasheet PDF文件第3页浏览型号NCEP026N10M的Datasheet PDF文件第4页浏览型号NCEP026N10M的Datasheet PDF文件第5页浏览型号NCEP026N10M的Datasheet PDF文件第6页浏览型号NCEP026N10M的Datasheet PDF文件第7页 
NCEP026N10M, NCEP026N10MD  
NCE N-Channel Super Trench II Power MOSFET  
Description  
The series of devices uses Super Trench II technology that is  
uniquely optimized to provide the most efficient high frequency  
switching performance. Both conduction and switching power  
losses are minimized due to an extremely low combination of  
General Features  
VDS =100V,ID =200A  
RDS(ON)=2.4m, typical (TO-220)@ VGS=10V  
RDS(ON)=2.2m, typical (TO-263)@ VGS=10V  
R
DS(ON) and Qg. This device is ideal for high-frequency switching  
Excellent gate charge x RDS(on) product(FOM)  
Very low on-resistance RDS(on)  
175 °C operating temperature  
Pb-free lead plating  
and synchronous rectification.  
Application  
DC/DC Converter  
100% UIS TESTED!  
Ideal for high-frequency switching and synchronous  
rectification  
100% Vds TESTED!  
TO-220  
TO-263  
Schematic Diagram  
Package Marking and Ordering Information  
Device Marking  
NCEP026N10M  
NCEP026N10MD  
Device  
Device Package  
Reel Size  
Tape width  
Quantity  
NCEP026N10M  
NCEP026N10MD  
TO-220  
-
-
-
-
-
-
TO-263  
Absolute Maximum Ratings (TC=25unless otherwise noted)  
Parameter  
Symbol  
Limit  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current-Continuous  
100  
±20  
V
V
VDS  
VGS  
200  
A
ID  
Drain Current-Continuous(TC=100)  
Pulsed Drain Current  
ID (100)  
IDM  
142  
A
800  
A
Maximum Power Dissipation  
300  
W
PD  
Derating factor  
Single pulse avalanche energy (Note 5)  
2
W/℃  
mJ  
EAS  
2300  
-55 To 175  
Operating Junction and Storage Temperature Range  
TJ,TSTG  
Wuxi NCE Power Co., Ltd  
Page1  
V1.0  
http://www.ncepower.com  

与NCEP026N10M相关器件

型号 品牌 获取价格 描述 数据表
NCEP026N10T NCEPOWER

获取价格

新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超
NCEP026N85 NCEPOWER

获取价格

新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超
NCEP026N85D NCEPOWER

获取价格

新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超
NCEP028N12LL NCEPOWER

获取价格

新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超
NCEP028N60AGU NCEPOWER

获取价格

新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超
NCEP028N85 NCEPOWER

获取价格

新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超
NCEP029N10D NCEPOWER

获取价格

新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超
NCEP02T10 NCEPOWER

获取价格

新洁能提供击穿电压等级范围为30V至250V的N沟道SGT-I系列功率MOSFET产品,以
NCEP02T10D NCEPOWER

获取价格

新洁能提供击穿电压等级范围为30V至250V的N沟道SGT-I系列功率MOSFET产品,以
NCEP02T10LL NCEPOWER

获取价格

新洁能提供击穿电压等级范围为30V至250V的N沟道SGT-I系列功率MOSFET产品,以