Datasheet > NCEP026N10M

NCEP026N10M

更新时间： 2024-03-03 10:11:11

品牌	Logo	应用领域
新洁能 - NCEPOWER		栅栅极
页数	文件大小	规格书
7页	352K
描述
新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超低的导通电阻（RDS(on)）与超低栅极电荷（Qg）的特点，结合先进轻巧紧凑的封装进一步提高了系统的功率密

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NCEP026N10M 数据手册

NCEP026N10M, NCEP026N10MD

NCE N-Channel Super Trench II Power MOSFET

Description

The series of devices uses Super Trench II technology that is

uniquely optimized to provide the most efficient high frequency

switching performance. Both conduction and switching power

losses are minimized due to an extremely low combination of

General Features

● V_DS=100V,I_D=200A

R_DS(ON)=2.4mΩ , typical (TO-220)@ V_GS=10V

R_DS(ON)=2.2mΩ , typical (TO-263)@ V_GS=10V

_DS(ON)and Q_g. This device is ideal for high-frequency switching

● Excellent gate charge x R_DS(on)product(FOM)

● Very low on-resistance R_DS(on)

● 175 °C operating temperature

● Pb-free lead plating

and synchronous rectification.

Application

● DC/DC Converter

100% UIS TESTED!

●Ideal for high-frequency switching and synchronous

rectification

100% ∆Vds TESTED!

TO-220

TO-263

Schematic Diagram

Package Marking and Ordering Information

Device Marking

NCEP026N10M

NCEP026N10MD

Device

Device Package

Reel Size

Tape width

Quantity

NCEP026N10M

NCEP026N10MD

TO-220

TO-263

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

100

±20

V^DS

V^GS

200

I_D

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

I_D(100℃)

I_DM

142

800

Maximum Power Dissipation

300

P_D

Derating factor

Single pulse avalanche energy ^{(Note 5)}

W/℃

℃

E_AS

2300

-55 To 175

Operating Junction and Storage Temperature Range

T_J,T_STG

Wuxi NCE Power Co., Ltd

Page1

V1.0

http://www.ncepower.com

12 3 4 5 6 7

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