Datasheet > NCEP025N60G

NCEP025N60G

更新时间： 2024-03-03 10:11:43

品牌	Logo	应用领域
新洁能 - NCEPOWER		栅栅极
页数	文件大小	规格书
8页	333K
描述
新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超低的导通电阻（RDS(on)）与超低栅极电荷（Qg）的特点，结合先进轻巧紧凑的封装进一步提高了系统的功率密

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NCEP025N60G 数据手册

http://www.ncepower.com

NCE N-Channel Super Trench II Power MOSFET

Description

NCEP025N60G

General Features

The NCEP025N60G uses Super Trench II technology that is

uniquely optimized to provide the most efficient high frequency

switching performance. Both conduction and switching power

losses are minimized due to an extremely low combination of

● V_DS=60V,I_D=165A

R_DS(ON)=2.2mΩ (typical) @ V_GS=10V

● Excellent gate charge x R_DS(on)product(FOM)

● Very low on-resistance R_DS(on)

● 150 °C operating temperature

● Pb-free lead plating

R_DS(ON)and Q_g. This device is ideal for high-frequency switching

and synchronous rectification.

Application

● DC/DC Converter

100% UIS TESTED!

● Ideal for high-frequency switching and synchronous rectification

100% ∆Vds TESTED!

DFN 5X6

Top View

Schematic Diagram

Bottom View

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

P025N60G

NCEP025N60G

DFN5X6-8L

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V^DS

±20

V^GS

Drain Current-Continuous (Silicon Limited)

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

165

115

660

145

1.16

540

I_D

I_D(100℃)

I_DM

Maximum Power Dissipation

P_D

Derating factor

Single pulse avalanche energy ^{(Note 5)}

W/℃

℃

E_AS

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case^{(Note 2)}

R_θJC

0.86

℃/W

Wuxi NCE Power Co., Ltd

Page1

V1.0

12 3 4 5 6 7 8

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