NCEP025N60, NCEP025N60D
NCE N-Channel Super Trench II Power MOSFET
Description
The series of devices uses Super Trench II technology that is
uniquely optimized to provide the most efficient high frequency
switching performance. Both conduction and switching power
losses are minimized due to an extremely low combination of
RDS(ON) and Qg. This device is ideal for high-frequency switching
and synchronous rectification.
General Features
● VDS =60V,ID =190A
RDS(ON)=2.25mΩ , typical @ VGS=10V
● Excellent gate charge x RDS(on) product(FOM)
● Very low on-resistance RDS(on)
● 175 °C operating temperature
● Pb-free lead plating
Application
● DC/DC Converter
100% UIS TESTED!
●Ideal for high-frequency switching and synchronous
rectification
100% ΔVds TESTED!
TO-220
TO-263
Schematic Diagram
Package Marking and Ordering Information
Device Marking
NCEP025N60
NCEP025N60D
Device
Device Package
Reel Size
Tape width
Quantity
NCEP025N60
NCEP025N60D
TO-220-3L
-
-
-
-
-
-
TO-263-2L
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
VDS
Limit
60
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
V
V
±20
VGS
190
142
760
220
1.47
672
A
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
ID (100℃)
IDM
A
A
Maximum Power Dissipation
W
PD
Derating factor
W/℃
mJ
℃
Single pulse avalanche energy (Note 1)
Operating Junction and Storage Temperature Range
EAS
-55 To 175
TJ,TSTG
Wuxi NCE Power Co., Ltd
Page1
http://www.ncepower.com
V1.0