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NCEP02525K PDF预览

NCEP02525K

更新时间: 2024-11-22 15:19:15
品牌 Logo 应用领域
新洁能 - NCEPOWER /
页数 文件大小 规格书
7页 433K
描述
新洁能提供击穿电压等级范围为30V至250V的N沟道SGT-I系列功率MOSFET产品,以技术水平和卓越的质量管理保证了出色的产品性能和可靠性,在降低系统设计难度的同时,提供了性价比。广泛应用于开

NCEP02525K 数据手册

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http://www.ncepower.com  
NCEP02525K  
NCE N-Channel Super Trench Power MOSFET  
Description  
The NCEP02525K uses Super Trench technology that is  
uniquely optimized to provide the most efficient high  
frequency switching performance. Both conduction and  
switching power losses are minimized due to an extremely  
low combination of RDS(ON) and Qg. This device is ideal for  
high-frequency switching and synchronous rectification.  
Schematic diagram  
General Features  
VDS =250V,ID =25A  
RDS(ON)=60m(typical) @ VGS=10V  
Excellent gate charge x RDS(on) product(FOM)  
Very low on-resistance RDS(on)  
175 °C operating temperature  
Pb-free lead plating  
100% UIS tested  
Marking and pin assignment  
Application  
LED backlighting  
Ideal for high-frequency switching and synchronous  
rectification  
100% UIS TESTED!  
TO-252 -2Ltop view  
Tape width  
Package Marking and Ordering Information  
Device Marking  
Device  
Device Package  
Reel Size  
Quantity  
2500 units  
NCEP02525K  
NCEP02525K  
TO-252-2L  
Ø330mm  
12mm  
Absolute Maximum Ratings (TA=25unless otherwise noted)  
Parameter  
Symbol  
VDS  
Limit  
250  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current-Continuous  
V
V
VGS  
±20  
ID  
ID (100)  
IDM  
25  
17.5  
A
Drain Current-Continuous(TC=100)  
Pulsed Drain Current  
A
100  
A
Maximum Power Dissipation  
PD  
135  
W
Derating factor  
Single pulse avalanche energy (Note 5)  
0.9  
W/℃  
mJ  
EAS  
320  
Operating Junction and Storage Temperature Range  
TJ,TSTG  
-55 To 175  
Thermal Characteristic  
Thermal Résistance, Junction-to-Case(Note 2)  
RθJC  
1.11  
/W  
Wuxi NCE Power Co., Ltd  
Page1  
V1.0  

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