Datasheet > NCEP02525G

NCEP02525G

更新时间： 2024-04-09 19:02:12

品牌	Logo	应用领域
新洁能 - NCEPOWER		/
页数	文件大小	规格书
7页	926K
描述
新洁能提供击穿电压等级范围为30V至250V的N沟道SGT-I系列功率MOSFET产品，以技术水平和卓越的质量管理保证了出色的产品性能和可靠性，在降低系统设计难度的同时，提供了性价比。广泛应用于开

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NCEP02525G 数据手册

http://www.ncepower.com

NCEP02525G

NCE N-Channel Super Trench Power MOSFET

Description

The series of devices uses Super Trench II technology that is

General Features

uniquely optimized to provide the most efficient high frequency ● V_DS=250V,I_D=25A

switching performance. Both conduction and switching power

losses are minimized due to an extremely low combination of

R_DS(ON)=72mΩ (typical) @ V_GS=10V

R_DS(ON)and Q_g. This device is ideal for high-frequency switching ● Excellent gate charge x R_DS(on)product(FOM)

and synchronous rectification.

● Very low on-resistance R_DS(on)

● 150 °C operating temperature

● Pb-free lead plating

Application

● DC/DC Converter

●

Ideal for high-frequency switching and synchronous

rectification

100% UIS TESTED!

100% ΔVds TESTED!

DFN 5X6

Top View

Bottom View

Schematic Diagram

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

P02525G

NCEP02525G

DFN5X6-8L

Absolute Maximum Ratings (T_A=25℃unless otherwise noted)

Parameter

Symbol

V_DS

Limit

250

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V_GS

±20

I_D

I_D(100℃)

I_DM

17.5

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

100

Maximum Power Dissipation

P_D

140

Derating factor

1.12

W/℃

℃

Single pulse avalanche energy ^{(Note 1)}

Operating Junction and Storage Temperature Range

E_AS

320

T_J,T_STG

-55 To 150

Thermal Characteristic

Thermal Résistance, Junction-to-Case

R_θJC

0.89

℃/W

Wuxi NCE Power Co., Ltd

Page1

V1.0

12 3 4 5 6 7

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