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NCEP02503S
NCE N-Channel Super Trench Power MOSFET
Description
The NCEP02503S uses Super Trench technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an extremely
low combination of RDS(ON) and Qg. This device is ideal for
high-frequency switching and synchronous rectification.
Schematic diagram
General Features
● VDS =250V,ID =3A
RDS(ON)=100mΩ (typical) @ VGS=10V
● Excellent gate charge x RDS(on) product(FOM)
● Very low on-resistance RDS(on)
● 150 °C operating temperature
● Pb-free lead plating
Application
● LED backlighting
Marking and pin assignment
● Ideal for high-frequency switching and synchronous
rectification
100% UIS TESTED!
SOP-8 top view
Tape width
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Quantity
4000 units
NCEP02503S
NCEP02503S
SOP-8
Ø330mm
12mm
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
VDS
Limit
250
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
V
V
VGS
±20
ID
ID (100℃)
IDM
3
2.1
A
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
A
12
A
Maximum Power Dissipation
Single pulse avalanche energy (Note 5)
PD
3.5
W
mJ
℃
EAS
180
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150
Thermal Characteristic
Thermal Résistance, Junction-to-Ambient(Note 2)
RθJA
36
℃/W
Wuxi NCE Power Co., Ltd
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