Pb Free Product
http://www.ncepower.com
NCEP0230D
NCE N-Channel Super Trench II Power MOSFET
Description
General Features
● VDS =200V,ID =30A
The NCEP0230D uses Super Trench II technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an extremely low
combination of RDS(ON) and Qg. This device is ideal for
high-frequency switching and synchronous rectification.
RDS(ON)=40mΩ (typical) @ VGS=10V
● Excellent gate charge x RDS(on) product(FOM)
● Very low on-resistance RDS(on)
● 175 °C operating temperature
● Pb-free lead plating
Application
● DC/DC Converter
100% UIS TESTED!
100% ΔVds TESTED!
●
Ideal for high-frequency switching and synchronous
rectification
TO-263
Schematic Diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCEP0230D
NCEP0230D
TO-263-2L
-
-
-
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
VDS
Limit
200
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
V
V
VGS
±20
ID
ID (100℃)
IDM
30
21
A
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
A
100
135
0.9
320
A
Maximum Power Dissipation
PD
W
Derating factor
W/℃
mJ
℃
Single pulse avalanche energy (Note1)
Operating Junction and Storage Temperature Range
EAS
TJ,TSTG
-55 To 175
Thermal Characteristic
Thermal Résistance, Junction-to-Case
RθJC
1.11
℃/W
Wuxi NCE Power Co., Ltd
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