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NCEP0230D PDF预览

NCEP0230D

更新时间: 2024-03-03 10:10:46
品牌 Logo 应用领域
新洁能 - NCEPOWER 栅极
页数 文件大小 规格书
7页 691K
描述
新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超低的导通电阻(RDS(on))与超低栅极电荷(Qg)的特点,结合先进轻巧紧凑的封装进一步提高了系统的功率密

NCEP0230D 数据手册

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Pb Free Product  
http://www.ncepower.com  
NCEP0230D  
NCE N-Channel Super Trench II Power MOSFET  
Description  
General Features  
VDS =200V,ID =30A  
The NCEP0230D uses Super Trench II technology that is  
uniquely optimized to provide the most efficient high  
frequency switching performance. Both conduction and  
switching power losses are minimized due to an extremely low  
combination of RDS(ON) and Qg. This device is ideal for  
high-frequency switching and synchronous rectification.  
RDS(ON)=40mΩ (typical) @ VGS=10V  
Excellent gate charge x RDS(on) product(FOM)  
Very low on-resistance RDS(on)  
175 °C operating temperature  
Pb-free lead plating  
Application  
DC/DC Converter  
100% UIS TESTED!  
100% ΔVds TESTED!  
Ideal for high-frequency switching and synchronous  
rectification  
TO-263  
Schematic Diagram  
Package Marking and Ordering Information  
Device Marking  
Device  
Device Package  
Reel Size  
Tape width  
Quantity  
NCEP0230D  
NCEP0230D  
TO-263-2L  
-
-
-
Absolute Maximum Ratings (TA=25unless otherwise noted)  
Parameter  
Symbol  
VDS  
Limit  
200  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current-Continuous  
V
V
VGS  
±20  
ID  
ID (100)  
IDM  
30  
21  
A
Drain Current-Continuous(TC=100)  
Pulsed Drain Current  
A
100  
135  
0.9  
320  
A
Maximum Power Dissipation  
PD  
W
Derating factor  
W/℃  
mJ  
Single pulse avalanche energy (Note1)  
Operating Junction and Storage Temperature Range  
EAS  
TJ,TSTG  
-55 To 175  
Thermal Characteristic  
Thermal Résistance, Junction-to-Case  
RθJC  
1.11  
/W  
Wuxi NCE Power Co., Ltd  
Page1  
V1.0  

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