http://www.ncepower.com
NCEP0218K
NCE N-Channel Super Trench Power MOSFET
Description
The NCEP0218K uses Super Trench technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an extremely
low combination of RDS(ON) and Qg. This device is ideal for
high-frequency switching and synchronous rectification.
Schematic diagram
General Features
● VDS =200V,ID =18A
RDS(ON)=145mΩ (typical) @ VGS=10V
● Excellent gate charge x RDS(on) product(FOM)
● Very low on-resistance RDS(on)
● 175 °C operating temperature
● Pb-free lead plating
Marking and pin assignment
Application
● LED backlighting
● Ideal for high-frequency switching and synchronous
rectification
100% UIS TESTED!
100% ΔVds TESTED!
TO-252 -2Ltop view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCEP0218K
NCEP0218K
TO-252
-
-
-
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
VDS
Limit
200
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
V
V
VGS
±20
ID
ID (100℃)
IDM
18
12
A
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
A
72
A
Maximum Power Dissipation
PD
140
W
Derating factor
0.93
80
W/℃
mJ
℃
Single pulse avalanche energy (Note 1)
Operating Junction and Storage Temperature Range
EAS
TJ,TSTG
-55 To 175
Thermal Characteristic
Thermal Résistance, Junction-to-Case
RθJC
1.07
℃/W
Wuxi NCE Power Co., Ltd
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