Datasheet > NCEP020N60AGU

NCEP020N60AGU

更新时间： 2024-03-03 10:09:12

品牌	Logo	应用领域
新洁能 - NCEPOWER		栅栅极
页数	文件大小	规格书
7页	685K
描述
新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超低的导通电阻（RDS(on)）与超低栅极电荷（Qg）的特点，结合先进轻巧紧凑的封装进一步提高了系统的功率密

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NCEP020N60AGU 数据手册

NCEP020N60AGU

http://www.ncepower.com

NCE N-Channel Super Trench II Power MOSFET

General Features

● V_DS=60V,I_D=180A

Description

The NCEP020N60AGU uses Super Trench II technology that

is uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and

switching power losses are minimized due to an extremely low

combination of R_DS(ON)and Q_g. This device is ideal for

high-frequency switching and synchronous rectification.

R_DS(ON)=1.8 mΩ (typical) @ V_GS=10V

R_DS(ON)=2.5 mΩ (typical) @ V_GS=4.5V

● Excellent gate charge x R_DS(on)product(FOM)

● Very low on-resistance R_DS(on)

● 150 °C operating temperature

● Pb-free lead plating

Application

● DC/DC Converter

100% UIS TESTED!

100% ΔVds TESTED!

● Ideal for high-frequency switching and synchronous rectification

DFN 5X6

Schematic Diagram

Top View

Bottom View

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

P020N60AGU

NCEP020N60AGU

DFN5X6-8L

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

VDS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

VGS

Drain Current-Continuous (Silicon Limited)

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current (Package Limited)

Maximum Power Dissipation

180

I_D

I_D(100℃)

I_DM

126

400

205

P_D

Derating factor

1.64

W/℃

℃

Single pulse avalanche energy ^{(Note 1)}

Operating Junction and Storage Temperature Range

E_AS

871

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case

R_θJC

R_θJA

0.61

℃/W

Thermal Resistance,Junction-to-Ambient

Wuxi NCE Power Co., Ltd

Page1

V2.0

12 3 4 5 6 7

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