http://www.ncepower.com
NCEP01T25T
NCE N-Channel Super Trench Power MOSFET
Description
The NCEP01T25T uses Super Trench technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an extremely
low combination of RDS(ON) and Qg. This device is ideal for
high-frequency switching and synchronous rectification.
Schematic diagram
General Features
● VDS =100V,ID =250A
RDS(ON) <2.5mΩ @ VGS=10V
● Excellent gate charge x RDS(on) product
● Very low on-resistance RDS(on)
● 175 °C operating temperature
● Pb-free lead plating
● 100% UIS tested
TO-247 top view
Application
● DC/DC Converter
100% UIS TESTED!
100% ∆Vds TESTED!
● Ideal for high-frequency switching and synchronous
rectification
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCEP01T25T
NCEP01T25T
TO-247
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
100
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
V
V
VDS
±20
VGS
250
175
A
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
ID (100℃)
IDM
A
1000
A
Maximum Power Dissipation
400
W
PD
Derating factor
Single pulse avalanche energy (Note 5)
2.67
W/℃
mJ
℃
EAS
2000
Operating Junction and Storage Temperature Range
-55 To 175
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
0.38
℃/W
Wuxi NCE Power Co., Ltd
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