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NCEP01T25LL PDF预览

NCEP01T25LL

更新时间: 2024-11-19 15:18:39
品牌 Logo 应用领域
新洁能 - NCEPOWER /
页数 文件大小 规格书
7页 346K
描述
新洁能提供击穿电压等级范围为30V至250V的N沟道SGT-I系列功率MOSFET产品,以技术水平和卓越的质量管理保证了出色的产品性能和可靠性,在降低系统设计难度的同时,提供了性价比。广泛应用于开

NCEP01T25LL 数据手册

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http://www.ncepower.com  
NCEP01T25LL  
NCE N-Channel Super Trench Power MOSFET  
Description  
The NCEP01T25LL uses Super Trench technology that is  
General Features  
uniquely optimized to provide the most efficient high  
frequency switching performance. Both conduction and  
switching power losses are minimized due to an extremely low  
combination of RDS(ON) and Qg. This device is ideal for  
high-frequency switching and synchronous rectification.  
VDS =100V,ID =250A  
DS(ON)=2.2m(typical) @ VGS=10V  
R
Excellent gate charge x RDS(on) product(FOM)  
Very low on-resistance RDS(on)  
175 °C operating temperature  
Pb-free lead plating  
Application  
100% UIS TESTED!  
DC/DC Converter  
100% Vds TESTED!  
Ideal for high-frequency switching and synchronous  
rectification  
TOLL  
Schematic Diagram  
Package Marking and Ordering Information  
Device Marking  
Device  
Device Package  
Reel Size  
Tape width  
Quantity  
NCEP01T25LL  
NCEP01T25LL  
TO-LL  
-
-
-
Absolute Maximum Ratings (TC=25unless otherwise noted)  
Parameter  
Symbol  
Limit  
100  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current-Continuous  
V
V
VDS  
±20  
VGS  
250  
175  
A
ID  
Drain Current-Continuous(TC=100)  
Pulsed Drain Current  
ID (100)  
IDM  
A
1000  
350  
A
Maximum Power Dissipation  
W
PD  
Derating factor  
Single pulse avalanche energy (Note 5)  
2.3  
W/℃  
mJ  
EAS  
1800  
Operating Junction and Storage Temperature Range  
-55 To 175  
TJ,TSTG  
Thermal Characteristic  
Thermal Resistance,Junction-to-Case(Note 2)  
RθJC  
0.43  
/W  
Wuxi NCE Power Co., Ltd  
Page 1  
V1.0  

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