http://www.ncepower.com
NCEP01T18VD
NCE N-Channel Super Trench Power MOSFET
Description
The NCEP01T18VD uses Super Trench technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an extremely
low combination of RDS(ON) and Qg. This device is ideal for
high-frequency switching and synchronous rectification.
Schematic diagram
General Features
● VDS =100V,ID =189A
RDS(ON) <2.6mΩ @ VGS=10V
● Excellent gate charge x RDS(on) product(FOM)
● Very low on-resistance RDS(on)
● 175 °C operating temperature
● Pb-free lead plating
● 100% UIS tested
Marking and pin assignment
Application
● DC/DC Converter
● Ideal for high-frequency switching and synchronous
rectification
100% UIS TESTED!
100% ∆Vds TESTED!
TO-263-7L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCEP01T18VD
NCEP01T18VD
TO-263-7L
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
100
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
V
V
VDS
±20
VGS
189
135
A
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
ID (100℃)
IDM
A
756
A
Maximum Power Dissipation
300
W
PD
Derating factor
Single pulse avalanche energy (Note 5)
2
W/℃
mJ
℃
EAS
1800
-55 To 175
Operating Junction and Storage Temperature Range
TJ,TSTG
Wuxi NCE Power Co., Ltd
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