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NCEP01P35AG
NCE P-Channel Super Trench Power MOSFET
Description
The NCEP01P35AG uses Super Trench technology that is
General Features
uniquely optimized to provide the most efficient high frequency
switching performance. Both conduction and switching power
losses are minimized due to an extremely low combination of
RDS(ON) and Qg. This device is ideal for high-frequency switching
and synchronous rectification
● VDS =-100V,ID =-35A
RDS(ON)=37mΩ (typical) @ VGS=-10V
RDS(ON)=45mΩ (typical) @ VGS=-4.5V
● Excellent gate charge x RDS(on) product(FOM)
● Very low on-resistance RDS(on)
● 150 °C operating temperature
● Pb-free lead plating
Application
● DC/DC Converter
●
Ideal for high-frequency switching and synchronous
rectification
100% UIS TESTED!
100% ΔVds TESTED!
DFN 5X6
Top View
Bottom View
Schematic Diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
P01P35AG
NCEP01P35AG
DFN5X6-8L
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
VDS
Limit
-100
±20
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
V
V
VGS
-35
-24.5
-140
95
A
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
ID (100℃)
IDM
A
A
Maximum Power Dissipation
W
PD
Derating factor
0.76
320
W/℃
mJ
℃
Single pulse avalanche energy (Note 1)
Operating Junction and Storage Temperature Range
EAS
-55 To 150
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Case
RθJC
1.32
℃/W
Wuxi NCE Power Co., Ltd
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