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NCEP018N60 PDF预览

NCEP018N60

更新时间: 2024-11-08 15:19:23
品牌 Logo 应用领域
新洁能 - NCEPOWER 栅极
页数 文件大小 规格书
6页 686K
描述
新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超低的导通电阻(RDS(on))与超低栅极电荷(Qg)的特点,结合先进轻巧紧凑的封装进一步提高了系统的功率密

NCEP018N60 数据手册

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NCEP018N60,NCEP018N60D  
NCE N-Channel Super Trench II Power MOSFET  
Description  
General Features  
The series of devices uses Super Trench II technology that is  
uniquely optimized to provide the most efficient high frequency  
switching performance. Both conduction and switching power  
losses are minimized due to an extremely low combination of  
RDS(ON) and Qg. This device is ideal for high-frequency switching  
and synchronous rectification.  
VDS =60V,ID =210A  
RDS(ON)=1.7mΩ , typical (TO-220) @ VGS=10V  
RDS(ON)=1.5mΩ , typical (TO-263) @ VGS=10V  
Excellent gate charge x RDS(on) product(FOM)  
Very low on-resistance RDS(on)  
175 °C operating temperature  
Pb-free lead plating  
Application  
DC/DC Converter  
100% UIS TESTED!  
Ideal for high-frequency switching and synchronous  
rectification  
100% ΔVds TESTED!  
TO-220  
TO-263  
Schematic Diagram  
Package Marking and Ordering Information  
Device Marking  
NCEP018N60  
NCEP018N60D  
Device  
Device Package  
Reel Size  
Tape width  
Quantity  
NCEP018N60  
NCEP018N60D  
TO-220  
-
-
-
TO-263  
Absolute Maximum Ratings (TC=25unless otherwise noted)  
Parameter  
Symbol  
VDS  
Limit  
60  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
±20  
VGS  
Drain Current-Continuous (TC=25)  
Drain Current-Continuous(TC=100)  
Pulsed Drain Current  
210  
157  
840  
255  
1.7  
A
ID (TC=25)  
ID ((TC=100)  
IDM  
A
A
Maximum Power Dissipation(TC=25)  
Derating factor  
W
PD(TC=25)  
W/℃  
mJ  
Single pulse avalanche energy (Note 1)  
Operating Junction and Storage Temperature Range  
EAS  
2332  
-55 To 175  
TJ,TSTG  
Thermal Characteristic  
Thermal Resistance,Junction-to-Case  
RθJC  
0.59  
/W  
Wuxi NCE Power Co., Ltd  
Page1  
V1.0  
http://www.ncepower.com  

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