Datasheet > NCEP015N30GU

NCEP015N30GU

更新时间： 2024-04-09 18:59:18

品牌	Logo	应用领域
新洁能 - NCEPOWER		栅栅极
页数	文件大小	规格书
6页	347K
描述
新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超低的导通电阻（RDS(on)）与超低栅极电荷（Qg）的特点，结合先进轻巧紧凑的封装进一步提高了系统的功率密

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NCEP015N30GU 数据手册

http://www.ncepower.com

NCEP015N30GU

NCE N-Channel Super Trench II Power MOSFET

Description

General Features

The series of devices uses Super Trench II technology that is

uniquely optimized to provide the most efficient high frequency

switching performance. Both conduction and switching power

losses are minimized due to an extremely low combination of

● V_DS=30V,I_D=170A

R_DS(ON)=1.3mΩ (typical) @ V_GS=10V

_DS(ON)=1.9mΩ (typical) @ V_GS=4.5V

_DS(ON)and Q_g. This device is ideal for high-frequency switching

● Excellent gate charge x R_DS(on)product(FOM)

● Very low on-resistance R_DS(on)

● 150 °C operating temperature

● Pb-free lead plating

and synchronous rectification.

Application

● DC/DC Converter

● Ideal for high-frequency switching and synchronous

100% UIS TESTED!

rectification

100% ∆Vds TESTED!

DFN 5X6

Top View

Bottom View

Schematic Diagram

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

P015N30GU

NCEP015N30GU

DFN5X6-8L

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

±20

V^DS

V^GS

170

I_D

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

I_D(100℃)

I_DM

130

680

Maximum Power Dissipation

P_D

Derating factor

Single pulse avalanche energy ^{(Note 5)}

0.76

583

W/℃

℃

E_AS

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case^{(Note 2)}

R_θJC

1.31

℃/W

Wuxi NCE Power Co., Ltd

Page1

V1.0

12 3 4 5 6

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