Datasheet > NCEP0107R

NCEP0107R

更新时间： 2024-04-09 18:59:38

品牌	Logo	应用领域
新洁能 - NCEPOWER		/
页数	文件大小	规格书
7页	642K
描述
新洁能提供击穿电压等级范围为30V至250V的N沟道SGT-I系列功率MOSFET产品，以技术水平和卓越的质量管理保证了出色的产品性能和可靠性，在降低系统设计难度的同时，提供了性价比。广泛应用于开

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NCEP0107R 数据手册

http://www.ncepower.com

NCEP0107R

NCE N-Channel Super Trench Power MOSFET

Description

The NCEP0107R uses Super Trench technology that is

uniquely optimized to provide the most efficient high frequency

switching performance. Both conduction and switching power

losses are minimized due to an extremely low combination of

R_DS(ON)and Q_g. This device is ideal for high-frequency

switching and synchronous rectification.

General Features

● V_DS= 100V,I_D= 7A

Schematic diagram

R_DS(ON)< 95mΩ @ V_GS=10V (Typ:75mΩ)

● Excellent gate charge x R_DS(on)product(FOM)

● Very low on-resistance R_DS(on)

● 150 °C operating temperature

● Pb-free lead plating

● 100% UIS tested

Application

● Power switching application

● Hard switched and high frequency circuits

● Uninterruptible power supply

SOT-223 top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

NCEP0107R

SOT-223-3L

Ø330mm

12mm

2500 units

Absolute Maximum Ratings (T_A=25℃unless otherwise noted)

Parameter

Symbol

VDS

Limit

Unit

Drain-Source Voltage

100

Gate-Source Voltage

±20

VGS

I_D

Drain Current-Continuous

Drain Current-Pulsed ^{(Note 1)}

I_DM

Single pulse avalanche energy ^{(Note 5)}

Maximum Power Dissipation

E_AS

℃

2.5

P_D

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient ^{(Note 2)}

R_θJA

℃/W

Electrical Characteristics (T_A=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BV_DSS

V_GS=0V I_D=250μA

100

Wuxi NCE Power Co., Ltd

Page1

V1.0

12 3 4 5 6 7

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