Datasheet > NCEP008N30GU

NCEP008N30GU

更新时间： 2024-03-03 10:11:11

品牌	Logo	应用领域
新洁能 - NCEPOWER		栅栅极
页数	文件大小	规格书
6页	692K
描述
新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超低的导通电阻（RDS(on)）与超低栅极电荷（Qg）的特点，结合先进轻巧紧凑的封装进一步提高了系统的功率密

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NCEP008N30GU 数据手册

NCEP008N30GU

http://www.ncepower.com

NCE N-Channel Super Trench II Power MOSFET

Description

General Features

The NCEP008N30GU uses Super Trench II technology that

is uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and

switching power losses are minimized due to an extremely low

combination of R_DS(ON)and Q_g. This device is ideal for

high-frequency switching and synchronous rectification.

●V_DS=30V,I_D=395A

R_DS(ON)=0.55mΩ (typical) @ V_GS=10V

R_DS(ON)=0.80mΩ (typical) @ V_GS=4.5V

●Excellent gate charge x R_DS(on)product(FOM)

●Very low on-resistance R_DS(on)

●150°C operating temperature

Application

● Pb-free lead plating

●DC/DC Converter

100% UIS TESTED!

100% ΔVds TESTED!

●Ideal for high-frequency switching and synchronous

rectification

PDFN 5X6-8L

Top View

Bottom View

Schematic Diagram

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

P008N30GU

NCEP008N30GU

PDFN5X6-8L

Ø330mm

12mm

5000units

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

VDS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

±20

VGS

395

I_D

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

I_D(100℃)

I_DM

249

1580

200

Maximum Power Dissipation

P_D

Derating factor

1.60

W/℃

℃

Single pulse avalanche energy ^{(Note 1)}

Operating Junction and Storage Temperature Range

E_AS

1831

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case

R_θJC

0.63

℃/W

Wuxi NCE Power Co., Ltd

Page1

V1.0

12 3 4 5 6

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