Datasheet > NCEB302Q

NCEB302Q

更新时间： 2024-11-19 15:19:31

品牌	Logo	应用领域
新洁能 - NCEPOWER		/
页数	文件大小	规格书
6页	645K
描述
????新洁能提供N30V的半桥功率MOSFET产品，是通过将两个N型功率MOSEFT产品以高、低边的串联的方式集成至单个封装中。半桥产品可以简化系统复杂度，减少系统寄生参数，从而优化系统设计效率

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NCEB302Q 数据手册

http://www.ncepower.com

NCEB302Q

30V Half Bridge Dual N-Channel Enhancement Mode Power MOSFET

Description

The NCEB302Q is designed to provide a high efficiency

synchronous buck power stage with optimal layout and

board space utilization. It includes two specialized MOSFETs

in a dual Power DFN3X3 package.

Schematic Diagram

General Features

Q1 and Q2 MOSFET

● V_DS=30V,I_D=30A

R_DS(ON)<9mΩ @ V_GS=10V

R_DS(ON)<14mΩ @ V_GS=4.5V

● Excellent gate charge x R_DS(on)product(FOM)

● Very low on-resistance R_DS(on)

● 150 °C operating temperature

● Pb-free lead plating

pin assignment

Application

● Compact DC/DC converter applications

Top View

Bottom View

100% UIS TESTED!

100% ΔVds TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

NCEB302Q

DFN3X3-8L

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

V_DS

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

V_GS

T_C=25°C

Drain Current-Continuous ^{(Note 2)}

I_D

T_C=100°C

Drain Current -Pulsed ^{(Note 1)}

Power Dissipation

120

I_DM

P_D

T_C=25°C

Operating Junction and Storage Temperature Range

-55 To 150

℃

T_J,T_STG

Thermal Characteristic

Parameter

Symbol

Typ

Max

Unit

Thermal Resistance,Junction-to-Case ^{(Note 2)}(Q1,Q2)

R_θJC

6.5

℃/W

Wuxi NCE Power Co., Ltd

Page1

V1.0

12 3 4 5 6

中文翻译

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