Datasheet > NCEB301G

NCEB301G

更新时间： 2024-09-14 15:18:51

品牌	Logo	应用领域
新洁能 - NCEPOWER		/
页数	文件大小	规格书
9页	474K
描述
????新洁能提供N30V的半桥功率MOSFET产品，是通过将两个N型功率MOSEFT产品以高、低边的串联的方式集成至单个封装中。半桥产品可以简化系统复杂度，减少系统寄生参数，从而优化系统设计效率

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NCEB301G 数据手册

Pb Free Product

http://www.ncepower.com

NCEB301G

30V Half Bridge Dual N-Channel Enhancement Mode Power MOSFET

Description

The NCEB301G is designed to provide a high efficiency

synchronous buck power stage with optimal layout and

board space utilization. It includes two specialized MOSFETs

in a dual Power DFN5x6 package. The Q1 "High Side"

MOSFET is desgined to minimze switching losses. The

Q2"Low Side" MOSFET uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge.

General Features

Schematic Diagram

Q1 "High Side" MOSFET

Q2 "Low Side" MOSFET

● V_DS=30V,I_D=20A

V_DS=30V,I_D=35A

_DS(ON)<8.5mΩ @ V_GS=10V R_DS(ON)<7mΩ @ V_GS=10V

pin assignment

_DS(ON)<14mΩ @ V_GS=4.5V R_DS(ON)<12mΩ @ V_GS=4.5V

● Excellent gate charge x R_DS(on)product(FOM)

● Very low on-resistance R_DS(on)

● 150 °C operating temperature

● Pb-free lead plating

● 100% UIS tested

Top View

Bottom View

100% UIS TESTED!

Application

● Compact DC/DC converter applications

100% ∆Vds TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

NCEB301G

DFN5X6-8L

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

±20

V_GS

T_C=25°C

Drain Current-Continuous ^{(Note 2)}

I_D

T_C=100°C

14.1

24.7

120

Drain Current -Pulsed ^{(Note 1)}

Power Dissipation

I_DM

P_D

T_C=25°C

Operating Junction and Storage Temperature Range

-55 To 150

℃

T_J,T_STG

Thermal Characteristic

Parameter

Symbol

R_θJC

Typ

Max

6.3

Unit

℃/W

Thermal Resistance,Junction-to-Case ^{(Note 2)}(Q1)

Thermal Resistance,Junction-to-Case ^{(Note 2)}(Q2)

R_θJC

2.9

3.1

Wuxi NCE Power Co., Ltd

Page1

V1.0

12 3 4 5 6 7...9

中文翻译

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