Datasheet > NCEAS065R022T4

NCEAS065R022T4

更新时间： 2024-03-03 10:10:59

品牌	Logo	应用领域
新洁能 - NCEPOWER		/
页数	文件大小	规格书
8页	684K
描述
????新洁能提供的650V和1200V碳化硅功率MOSFET产品，具有电流密度大、击穿电压高、损耗低等特点。同时，该系列产品具有优良的短路能力，为应用中的突发状况提供充足的裕量。广泛应用于新能源

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NCEAS065R022T4 数据手册

PbFree Product

NCEAS065R022T4

650V, 93A, N-channel SiC power MOSFET

General Description:

NCEAS065R022T4 is a SiC MOSFET that contributes to miniaturization and

low power consumption of applications. This product achieves industry-leading low

on-resistance without sacrificing short-circuit withstand time. This is a 4-pin

package type with a driver source terminal that can maximize the high-speed

switching performance that is a feature of SiC MOSFETs.

Features

 Low on-resistance

 Fast switching speed

 Fast reverse recovery

 Easy to parallel

Schematic diagram

 Simple to drive

 Pb-free lead plating ; RoHS compliant

Application

 Solar inverters

 DC/DC converters

 Switch mode power supplies

 Induction heating

 Motor drives

TO-247-4L

Package Marking and Ordering Information

Device

Device Package

Device Marking

NCEAS065R022T4

TO-247-4L

NCEAS065R022T4

Absolute Maximum Ratings (T_C=25°C unless otherwise noted)

Parameter

Symbol

VDS

Limit

650

Unit

Drain-Source Voltage

Gate-Source Voltage

-4 to +22

VGS

Drain Current-Continuous ^{(Note 1)}

I_D

I_D(100℃)

I_DM

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current ^{(Note 1)}

175

Maximum Power Dissipation

339

P_D

Recommended turn-on gate - source drive voltage

Recommended turn-off gate - source drive voltage

Virtual junction temperature

0 to +18

VGS_on

VGS_off

T_vj

175

℃

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

Wuxi NCE Power Co., Ltd

Page

V1.0

http://www.ncepower.com

12 3 4 5 6 7 8

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