Datasheet > NCEAP60T20D

NCEAP60T20D

更新时间： 2024-04-09 19:00:30

品牌	Logo	应用领域
新洁能 - NCEPOWER		双极性晶体管
页数	文件大小	规格书
6页	723K
描述
新洁能提供质量可靠、品种齐全、性能卓越的车规级功率器件，包含N型MOSFET，P型MOSFET，双通道MOSFET，IGBT，上述车规级功率器件均已通过AEC-Q101认证。其中，车规级功率MOS

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http://www.ncepower.com

NCEAP60T20D

NCE Automotive N-Channel Super Trench Power MOSFET

Description

General Features

The NCEAP60T20D uses Super Trench technology that is uniquely

● V_DS=60V,I_D=250A

optimized to provide the most efficient high frequency switching

R_DS(ON)=1.8mΩ (typical) @ V_GS=10V

performance. Both conduction and switching power losses are

minimized due to an extremely low combination of RDS(ON) and

Qg. This device is ideal for high-frequency switching and

synchronous rectification.

● Excellent gate charge x R_DS(on)product(FOM)

● Very low on-resistance R_DS(on)

● 175 °C operating temperature

● Pb-free lead plating

Application

● Automotive application

● 100% UIS tested

● 100% ΔVds tested

● DC/DC Converter

● AEC-Q101 qualified

● Ideal for high-frequency switching and synchronous rectification

TO-263

Top View

Schematic Diagram

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

AP60T20D

NCEAP60T20D

TO-263-2L

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

V^DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

±20

V^GS

250

176

I_D

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

I_D(100℃)

I_DM

1000

255

Maximum Power Dissipation

P_D

Derating factor

1.7

W/℃

℃

Single pulse avalanche energy ^{(Note 1)}

Operating Junction and Storage Temperature Range

E_AS

2000

-55 To 175

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case

R_θJC

0.59

℃/W

Wuxi NCE Power Co., Ltd

Page1

V1.0

12 3 4 5 6

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