Datasheet > NCEAP60T15G

NCEAP60T15G

更新时间： 2024-04-09 19:00:22

品牌	Logo	应用领域
新洁能 - NCEPOWER		双极性晶体管
页数	文件大小	规格书
6页	713K
描述
新洁能提供质量可靠、品种齐全、性能卓越的车规级功率器件，包含N型MOSFET，P型MOSFET，双通道MOSFET，IGBT，上述车规级功率器件均已通过AEC-Q101认证。其中，车规级功率MOS

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http://www.ncepower.com

NCEAP60T15G

NCE Automotive N-Channel Super Trench Power MOSFET

Description

General Features

The NCEAP60T15G uses Super Trench technology that is ●V_DS=60V,I_D=196A (Silicon Limited)

uniquely optimized to provide the most efficient high frequency R_DS(ON)< 3.1mΩ @ V_GS=10V (Typ:2.8mΩ)

switching performance. Both conduction and switching power ● Excellent gate charge x R_DS(on)product(FOM)

losses are minimized due to an extremely low combination of ● Very low on-resistance R_DS(on)

R_DS(ON)and Q_g. This device is ideal for high-frequency switching ● 175°C operating temperature

and synchronous rectification.

● Pb-free lead plating;RoHS compliant

● Halogen-free according to IEC61249-2-21

● 100% UIS tested

Application

● Automotive application

● DC/DC Converter

● 100% ΔVds tested

● Ideal for high-frequency switching and synchronous rectification

● AEC-Q101 qualified

DFN 5X6-8L

Schematic Diagram

Top View

Bottom View

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

AP60T15G

NCEAP60T15G

DFN5X6-8L

Ø330mm

12mm

5000units

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

VDS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

VGS

Drain Current-Continuous (Silicon Limited)

Drain Current-Continuous(T_C=100℃)

Drain Current-Continuous (Package Limited)

Pulsed Drain Current

196

139

120

480

240

1.6

I_D

I_D(100℃)

I_D

I_DM

Maximum Power Dissipation

W/℃

℃

P_D

Derating factor

Single pulse avalanche energy ^{(Note 1)}

Operating Junction and Storage Temperature Range

E_AS

973

-55 To 175

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case^{(Note 2)}

R_θJC

0.625

℃/W

Wuxi NCE Power Co., Ltd

Page1

V1.0

12 3 4 5 6

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