Datasheet > NCEAP60ND30AG

NCEAP60ND30AG

更新时间： 2024-03-03 10:10:45

品牌	Logo	应用领域
新洁能 - NCEPOWER		双极性晶体管
页数	文件大小	规格书
6页	389K
描述
新洁能提供质量可靠、品种齐全、性能卓越的车规级功率器件，包含N型MOSFET，P型MOSFET，双通道MOSFET，IGBT，上述车规级功率器件均已通过AEC-Q101认证。其中，车规级功率MOS

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NCEAP60ND30AG 数据手册

http://www.ncepower.com

NCEAP60ND30AG

NCE Automotive N-Channel Super Trench Power MOSFET

Description

General Features

The NCEAP60ND30AG uses Super Trench technology that is ● V_DS=60V,I_D=40A

uniquely optimized to provide the most efficient high frequency

switching performance. Both conduction and switching power

R_DS(ON)=12mΩ (typical) @ V_GS=10V

R_DS(ON)=15mΩ (typical) @ V_GS=4.5V

losses are minimized due to an extremely low combination of ● Excellent gate charge x R_DS(on)product(FOM)

R_DS(ON)and Q_g. This device is ideal for high-frequency switching ● Very low on-resistance R_DS(on)

and synchronous rectification.

● 175 °C operating temperature

● Pb-free lead plating

● 100% UIS tested

Application

● Automotive application

● DC/DC Converter

● 100% ΔVds tested

● Ideal for high-frequency switching and synchronous rectification

● AEC-Q101 qualified

Top View

Pin Assignment

Schematic Diagram

DFN 5X6-8L

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

AP60ND30AG

NCEAP60ND30AG

DFN5x6-8L

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

V^DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

V^GS

I_D

Drain Current-Continuous

I_D(100℃)

I_DM

Pulsed Drain Current

120

Maximum Power Dissipation

P_D

Derating factor

0.32

135

W/℃

℃

Single pulse avalanche energy ^{(Note 2)}

Operating Junction and Storage Temperature Range

E_AS

-55 To 175

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case

R_θJC

3.13

℃/W

Wuxi NCE Power Co., Ltd

Page1

V2.0

12 3 4 5 6

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