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NCEAP6050AQU PDF预览

NCEAP6050AQU

更新时间: 2024-12-01 17:01:03
品牌 Logo 应用领域
新洁能 - NCEPOWER 双极性晶体管
页数 文件大小 规格书
6页 698K
描述
新洁能提供质量可靠、品种齐全、性能卓越的车规级功率器件,包含N型MOSFET,P型MOSFET,双通道MOSFET,IGBT,上述车规级功率器件均已通过AEC-Q101认证。其中,车规级功率MOS

NCEAP6050AQU 数据手册

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http://www.ncepower.com  
NCEAP6050AQU  
NCE Automotive N-Channel Super Trench Power MOSFET  
Description  
General Features  
VDS =60V,ID =68A  
The NCEAP6050AQU uses Super Trench technology that is  
uniquely optimized to provide the most efficient high frequency  
RDS(ON)=6.5mΩ (typical) @ VGS=10V  
switching performance. Both conduction and switching power losses  
are minimized due to an extremely low combination of RDS(ON) and  
Qg. This device is ideal for high-frequency switching and  
synchronous rectification.  
RDS(ON)=7.7mΩ (typical) @ VGS=4.5V  
Excellent gate charge x RDS(on) product(FOM)  
Very low on-resistance RDS(on)  
175 °C operating temperature  
100% UIS tested  
Application  
Automotive application  
100% ΔVds tested  
DC/DC Converter  
Pb-free lead plating  
Ideal for high-frequency switching and synchronous rectification  
AEC-Q101 qualified  
PDFN 3X3-8L  
Schematic Diagram  
Top View  
Bottom View  
Package Marking and Ordering Information  
Device Marking  
Device  
Device Package  
Reel Size  
Tape width  
Quantity  
AP6050AQU  
NCEP6050AQU  
PDFN3X3-8L  
-
-
-
Absolute Maximum Ratings (TC=25unless otherwise noted)  
Parameter  
Symbol  
VDS  
Limit  
60  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current-Continuous  
V
V
±20  
VGS  
68  
48  
A
ID  
ID (100)  
IDM  
Drain Current-Continuous(TC=100)  
Pulsed Drain Current  
A
200  
71  
A
Maximum Power Dissipation  
W
PD  
Derating factor  
0.48  
288  
W/℃  
mJ  
Single pulse avalanche energy (Note 1)  
Operating Junction and Storage Temperature Range  
EAS  
-55 To 175  
TJ,TSTG  
Thermal Characteristic  
Thermal Resistance,Junction-to-Case  
Thermal Resistance,Junction-to-Ambient (Note 4)  
RθJC  
RθJA  
2.1  
60  
/W  
/W  
Wuxi NCE Power Co., Ltd  
Page1  
V1.0  

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