http://www.ncepower.com
NCEAP40PT15G
NCE Automotive P-Channel Super Trench Power MOSFET
Description
General Features
The NCEAP40PT15G uses Super Trench technology that is ● VDS =-40V,ID =-160A
uniquely optimized to provide the most efficient high frequency
switching performance. Both conduction and switching power
RDS(ON)=2.8mΩ (typical) @ VGS=-10V
RDS(ON)=3.9mΩ (typical) @ VGS=-4.5V
losses are minimized due to an extremely low combination of ● Excellent gate charge x RDS(on) product(FOM)
RDS(ON) and Qg. This device is ideal for high-frequency switching ● Very low on-resistance RDS(on)
and synchronous rectification.
● 175 °C operating temperature
● Pb-free lead plating
● 100% UIS tested
Application
● Automotive application
● DC/DC Converter
● 100% ΔVds tested
● Ideal for high-frequency switching and synchronous rectification ● AEC-Q101 qualified
DFN 5X6
Schematic Diagram
Top View
Bottom View
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
AP40PT15G
NCEAP40PT15G
DFN5X6-8L
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
-40
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
V
V
VDS
±20
VGS
-160
-113
A
ID
ID (TC=100℃)
IDM
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
A
-640
A
Maximum Power Dissipation(TC=25℃)
Derating factor
180
W
PD
1.2
W/℃
mJ
℃
Single pulse avalanche energy (Note 1)
Operating Junction and Storage Temperature Range
EAS
1076
-55 To 175
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Case
RθJC
0.83
℃/W
Wuxi NCE Power Co., Ltd
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