http://www.ncepower.com
NCEAP40P80G
NCE Automotive P-Channel Super Trench Power MOSFET
Description
General Features
The NCEAP40P80G uses Super Trench technology that is uniquely
optimized to provide the most efficient high frequency switching
performance. Both conduction and switching power losses are
minimized due to an extremely low combination of RDS(ON) and Qg.
This device is ideal for high-frequency switching and synchronous
rectification
● VDS =-40V,ID =-80A
RDS(ON)=6.3mΩ (typical) @ VGS=-10V
RDS(ON)=9.0mΩ (typical) @ VGS=-4.5V
● Excellent gate charge x RDS(on) product(FOM)
● Very low on-resistance RDS(on)
● 175 °C operating temperature
● Pb-free lead plating
Application
● Automotive application
● 100% UIS tested
● DC/DC Converter
● 100% ΔVds tested
● Ideal for high-frequency switching and synchronous rectification
● AEC-Q101 qualified
DFN 5X6
Top View
Bottom View
Schematic Diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
AP40P80G
NCEAP40P80G
DFN5X6-8L
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
VDS
Limit
-40
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
V
V
±20
VGS
-80
-56
A
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
ID (TC=100℃)
A
-320
90
A
IDM
PD
IDM
Maximum Power Dissipation
Pulsed Drain Current
W
A
-320
0.6
Derating factor
W/℃
mJ
℃
Single pulse avalanche energy (Note 1)
Operating Junction and Storage Temperature Range
EAS
500
-55 To 175
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Case
RθJC
1.67
℃/W
Wuxi NCE Power Co., Ltd
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