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NCEAP40P80G PDF预览

NCEAP40P80G

更新时间: 2024-12-01 15:19:07
品牌 Logo 应用领域
新洁能 - NCEPOWER 双极性晶体管
页数 文件大小 规格书
6页 674K
描述
新洁能提供质量可靠、品种齐全、性能卓越的车规级功率器件,包含N型MOSFET,P型MOSFET,双通道MOSFET,IGBT,上述车规级功率器件均已通过AEC-Q101认证。其中,车规级功率MOS

NCEAP40P80G 数据手册

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http://www.ncepower.com  
NCEAP40P80G  
NCE Automotive P-Channel Super Trench Power MOSFET  
Description  
General Features  
The NCEAP40P80G uses Super Trench technology that is uniquely  
optimized to provide the most efficient high frequency switching  
performance. Both conduction and switching power losses are  
minimized due to an extremely low combination of RDS(ON) and Qg.  
This device is ideal for high-frequency switching and synchronous  
rectification  
VDS =-40V,ID =-80A  
RDS(ON)=6.3mΩ (typical) @ VGS=-10V  
RDS(ON)=9.0mΩ (typical) @ VGS=-4.5V  
Excellent gate charge x RDS(on) product(FOM)  
Very low on-resistance RDS(on)  
175 °C operating temperature  
Pb-free lead plating  
Application  
Automotive application  
100% UIS tested  
DC/DC Converter  
100% ΔVds tested  
Ideal for high-frequency switching and synchronous rectification  
AEC-Q101 qualified  
DFN 5X6  
Top View  
Bottom View  
Schematic Diagram  
Package Marking and Ordering Information  
Device Marking  
Device  
Device Package  
Reel Size  
Tape width  
Quantity  
AP40P80G  
NCEAP40P80G  
DFN5X6-8L  
-
-
-
Absolute Maximum Ratings (TC=25unless otherwise noted)  
Parameter  
Symbol  
VDS  
Limit  
-40  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current-Continuous  
V
V
±20  
VGS  
-80  
-56  
A
ID  
Drain Current-Continuous(TC=100)  
Pulsed Drain Current  
ID (TC=100)  
A
-320  
90  
A
IDM  
PD  
IDM  
Maximum Power Dissipation  
Pulsed Drain Current  
W
A
-320  
0.6  
Derating factor  
W/℃  
mJ  
Single pulse avalanche energy (Note 1)  
Operating Junction and Storage Temperature Range  
EAS  
500  
-55 To 175  
TJ,TSTG  
Thermal Characteristic  
Thermal Resistance,Junction-to-Case  
RθJC  
1.67  
/W  
Wuxi NCE Power Co., Ltd  
Page1  
V1.0  

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