Datasheet > NCEAP40P60G

NCEAP40P60G

更新时间： 2024-03-03 10:10:24

品牌	Logo	应用领域
新洁能 - NCEPOWER		双极性晶体管
页数	文件大小	规格书
6页	466K
描述
新洁能提供质量可靠、品种齐全、性能卓越的车规级功率器件，包含N型MOSFET，P型MOSFET，双通道MOSFET，IGBT，上述车规级功率器件均已通过AEC-Q101认证。其中，车规级功率MOS

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NCEAP40P60G 数据手册

http://www.ncepower.com

NCEAP40P60G

NCE Automotive P-Channel Super Trench Power MOSFET

General Features

● V_DS=-40V,I_D=-60A

Description

The NCEAP40P60G uses Super Trench technology that is uniquely

R_DS(ON)=8.8mΩ (typical) @ V_GS=-10V

R_DS(ON)=12.5mΩ (typical) @ V_GS=-4.5V

optimized to provide the most efficient high frequency switching

performance. Both conduction and switching power losses are minimized ● Excellent gate charge x R_DS(on)product(FOM)

due to an extremely low combination of R_DS(ON)and Q_g. This device is ideal ● Very low on-resistance R_DS(on)

for high-frequency switching and synchronous rectification

● 175 °C operating temperature

● Pb-free lead plating

● 100% UIS tested

Application

●Automotive application

●DC/DC Converter

● 100% ΔVds tested

●Ideal for high-frequency switching and synchronous rectification

● AEC-Q101 qualified

DFN 5X6

Schematic Diagram

Top View

Bottom View

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

AP40P60G

NCEAP40P60G

DFN5X6-8L

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

V^DS

Limit

-40

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

±20

V^GS

-68

-48.6

-272

I_D(T_C=25℃)

I_D(T_C=100℃)

I_DM

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

Maximum Power Dissipation(T_C=25℃)

Derating factor

P_D(T_C=25℃)

0.64

352

W/℃

℃

Single pulse avalanche energy ^{(Note 1)}

Operating Junction and Storage Temperature Range

E_AS

-55 To 175

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case

R_θJC

1.56

℃/W

Wuxi NCE Power Co., Ltd

Page1

V1.0

12 3 4 5 6

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