Datasheet > NCEAP40ND80G

NCEAP40ND80G

更新时间： 2024-05-14 22:08:18

品牌	Logo	应用领域
新洁能 - NCEPOWER		双极性晶体管
页数	文件大小	规格书
6页	676K
描述
新洁能提供质量可靠、品种齐全、性能卓越的车规级功率器件，包含N型MOSFET，P型MOSFET，双通道MOSFET，IGBT，上述车规级功率器件均已通过AEC-Q101认证。其中，车规级功率MOS

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NCEAP40ND80G 数据手册

http://www.ncepower.com

NCEAP40ND80G

NCE Automotive N-Channel Super Trench Power MOSFET

Description

General Features

The NCEAP40ND80G uses Super Trench technology that is ● V_DS=40V,I_D=90A

uniquely optimized to provide the most efficient high frequency

switching performance. Both conduction and switching power

R_DS(ON)=4.3mΩ (typical) @ V_GS=10V

R_DS(ON)=5.5mΩ (typical) @ V_GS=4.5V

losses are minimized due to an extremely low combination of ● Excellent gate charge x R_DS(on)product(FOM)

R_DS(ON)and Q_g. This device is ideal for high-frequency switching ● Very low on-resistance R_DS(on)

and synchronous rectification.

● 175 °C operating temperature

● Pb-free lead plating

● 100% UIS tested

Application

● Automotive application

● DC/DC Converter

● 100% ΔVds tested

● Ideal for high-frequency switching and synchronous rectification ● AEC-Q101 qualified

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Schematic Diagram

DFN 5X6

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

12mm

Quantity

AP40ND80G

NCEAP40ND80G

DFN5x6-8L

Ø330mm

5000units

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

VDS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

±20

VGS

I_D

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

I_D(100℃)

I_DM

360

Maximum Power Dissipation

P_D

Derating factor

0.56

W/℃

℃

Single pulse avalanche energy ^{(Note 1)}

Operating Junction and Storage Temperature Range

E_AS

500

-55 To 175

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case^{(Note 2)}

R_θJC

1.8

℃/W

Wuxi NCE Power Co., Ltd

Page1

V1.0

12 3 4 5 6

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