NCEAP40ND80AG
http://www.ncepower.com
NCE Automotive N-Channel Super Trench Power MOSFET
Description
General Features
The NCEAP40ND80AG uses Super Trench technology that is ● VDS =40V,ID =90A
uniquely optimized to provide the most efficient high frequency
RDS(ON)=4.7mΩ (typical) @ VGS=10V
switching performance. Both conduction and switching power ● Excellent gate charge x RDS(on) product(FOM)
losses are minimized due to an extremely low combination of ● Very low on-resistance RDS(on)
RDS(ON) and Qg. This device is ideal for high-frequency switching and ● 175 °C operating temperature
synchronous rectification.
● Pb-free lead plating;RoHS compliant
● Halogen-free according to IEC61249-2-21
● 100% UIS tested
Application
● Automotive application
● DC/DC Converter
● 100% ΔVds tested
● Ideal for high-frequency switching and synchronous rectification
● AEC-Q101 qualified
DFN 5X6-8L
Top View
Bottom View
Schematic Diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
AP40ND80AG
NCEAP40ND80AG
DFN5x6-8L
Ø330mm
12mm
5000units
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
VDS
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
40
±20
V
V
VGS
90
A
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
ID (100℃)
IDM
64
A
360
A
Maximum Power Dissipation
83
W
PD
Derating factor
0.56
500
W/℃
mJ
℃
Single pulse avalanche energy (Note 1)
Operating Junction and Storage Temperature Range
EAS
-55 To 175
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Case
RθJC
1.8
℃/W
Wuxi NCE Power Co., Ltd
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