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NCEAP40ND80AG PDF预览

NCEAP40ND80AG

更新时间: 2024-04-09 18:58:57
品牌 Logo 应用领域
新洁能 - NCEPOWER 双极性晶体管
页数 文件大小 规格书
6页 643K
描述
新洁能提供质量可靠、品种齐全、性能卓越的车规级功率器件,包含N型MOSFET,P型MOSFET,双通道MOSFET,IGBT,上述车规级功率器件均已通过AEC-Q101认证。其中,车规级功率MOS

NCEAP40ND80AG 数据手册

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NCEAP40ND80AG  
http://www.ncepower.com  
NCE Automotive N-Channel Super Trench Power MOSFET  
Description  
General Features  
The NCEAP40ND80AG uses Super Trench technology that is VDS =40V,ID =90A  
uniquely optimized to provide the most efficient high frequency  
RDS(ON)=4.7mΩ (typical) @ VGS=10V  
switching performance. Both conduction and switching power Excellent gate charge x RDS(on) product(FOM)  
losses are minimized due to an extremely low combination of Very low on-resistance RDS(on)  
RDS(ON) and Qg. This device is ideal for high-frequency switching and 175 °C operating temperature  
synchronous rectification.  
Pb-free lead plating;RoHS compliant  
Halogen-free according to IEC61249-2-21  
100% UIS tested  
Application  
Automotive application  
DC/DC Converter  
100% ΔVds tested  
Ideal for high-frequency switching and synchronous rectification  
AEC-Q101 qualified  
DFN 5X6-8L  
Top View  
Bottom View  
Schematic Diagram  
Package Marking and Ordering Information  
Device Marking  
Device  
Device Package  
Reel Size  
Tape width  
Quantity  
AP40ND80AG  
NCEAP40ND80AG  
DFN5x6-8L  
Ø330mm  
12mm  
5000units  
Absolute Maximum Ratings (TC=25unless otherwise noted)  
Parameter  
Symbol  
VDS  
Limit  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current-Continuous  
40  
±20  
V
V
VGS  
90  
A
ID  
Drain Current-Continuous(TC=100)  
Pulsed Drain Current  
ID (100)  
IDM  
64  
A
360  
A
Maximum Power Dissipation  
83  
W
PD  
Derating factor  
0.56  
500  
W/℃  
mJ  
Single pulse avalanche energy (Note 1)  
Operating Junction and Storage Temperature Range  
EAS  
-55 To 175  
TJ,TSTG  
Thermal Characteristic  
Thermal Resistance,Junction-to-Case  
RθJC  
1.8  
/W  
Wuxi NCE Power Co., Ltd  
Page1  
V1.1  

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